Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1062
DESCRIPTION
·With
TO-3PN package
·Complement
to type 2SC2486
·High
collector power dissipation
APPLICATIONS
·High
power audio frequency amplifier
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-5
-7
-12
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-5A ;I
B
=-0.5A
B
2SA1062
MIN
-120
TYP.
MAX
UNIT
V
-2.0
-1.8
-50
-50
20
40
20
20
200
V
V
μA
μA
I
C
=-5A;V
CE
=-5V
V
CB
=-120V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
C
=-5A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
MHz
h
FE-2
Classifications
R
40-80
Q
60-120
P
100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1062
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
RF/无线
