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2SA1208-T

70mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
Objectid
1426751465
Reach Compliance Code
unknown
最大集电极电流 (IC)
0.07 A
集电极-发射极最大电压
160 V
配置
SINGLE
最小直流电流增益 (hFE)
200
JESD-30 代码
O-PBCY-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
BOTTOM
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
150 MHz
VCEsat-Max
0.4 V
文档预览
Ordering number:ENN781G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208/2SC2910
High-Voltage Switching
Audio 80W Output Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of h
FE
and small C
ob
.
· Fast swtching speed.
Package Dimensions
unit:mm
2006B
[2SA1208/2SC2910]
6.0
5.0
4.7
0.5
0.6
6.0
14.0
3.0
8.5
0.5
0.5
1 2 3
( ) : 2SA1208
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.45
1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
(–)180
(–)160
(–)5
(–)70
(–)140
900
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
VCB=(–)10V, f=1MHz
IC=(–)30mA, IB=(–)3mA
100*
150
(2.5)2.0
0.08
(–0.14)
0.3
(–0.4)
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
400*
MHz
pF
V
Unit
µA
µA
* : The 2SA1208/2SC2910 are classified by 10mA h
FE
are follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4
2SA1208/2SC2910
Continued from preceding page.
Parameter
Turn-ON Time
Fall Time
Storage Time
Symbol
ton
tf
tstg
Conditions
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
min
typ
0.1
0.2
1.0
max
Unit
µs
µs
µs
Switching Time Test Circuit
IN
3kΩ
IB1
IB2
50Ω
5kΩ
OUT
2kΩ
1µF
--2V
1µF
20V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
--60
IC -- VCE
2SA1208
.
--0
3m
A
60
IC -- VCE
2SC2910
0.3
mA
A
--50
Collector Current, IC – mA
Collector Current, IC – mA
--0.
A
25m
50
0.25m
40
--40
--0.2mA
0.2mA
A
0.15m
0.1mA
--30
--0.15mA
30
--20
--0.1mA
--0.05mA
20
0.05mA
10
--10
IB=0
0
0
--10
--20
--30
--40
--50
--60
--70
0
0
10
20
30
40
50
IB=0
60
70
Collector-to-Emitter Voltage, VCE – V
ITR03005
7
5
3
Collector-to-Emitter Voltage, VCE – V
ITR03006
7
hFE -- IC
2SA1208
VCE=--5V
hFE -- IC
2SC2910
VCE=5V
5
3
75
°C
DC Current Gain, hFE
75°C
25°C
--25°C
DC Current Gain, hFE
2
25°C
--25°C
2
100
7
5
3
2
100
7
5
3
2
10
5
7
--
1.0
2
--
10
Collector Current, IC – mA
2
3
5
7
3
5
7
--
100
10
5
7
1.0
2
3
5
7
10
2
3
5
ITR03007
Collector Current, IC – mA
7 100
ITR03008
No.781-2/4
2SA1208/2SC2910
5
fT -- IC
Gain-Bandwidth Product, fT – MHz
2SA1208
VCE=--10V
5
3
2
fT -- IC
2SC2910
VCE=10V
Gain-Bandwidth Product, fT – MHz
3
2
100
7
5
3
2
100
7
5
3
2
10
5
7
--1.0
2
3
5
7
--10
2
3
5
Collector Current, IC – mA
10
7
7 --100
ITR03009
10
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
10
7 100
ITR03010
Cob -- VCB
2SA1208
f=1MHz
Output Capacitance, Cob – pF
Cob -- VCB
2SC2910
f=1MHz
7
5
Output Capacitance, Cob – pF
5
3
3
2
2
1.0
7
5
1.0
7
5
2
3
5
7
--10
2
3
5
Collector-to-Base Voltage, VCB -- V
2
--100
ITR03011
2
7
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
7
100
ITR03012
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2SA1208
IC / IB=10
VCE(sat) -- IC
2SC2910
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
--1000
7
5
3
2
1000
7
5
3
2
--100
7
5
3
75
°
C
25°C
100
7
5
25°C
75°C
--25
°C
5
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
ITR03013
--25
°C
3
5
7 1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
--80
--70
Collector Current, IC – mA
80
7 100
ITR03014
IC -- VBE
2SA1208
VCE=--5V
Collector Current, IC – mA
IC -- VBE
2SC2910
VCE=5V
70
60
50
40
30
20
10
0
Collector Current, IC – mA
--60
--50
--40
--30
--20
--10
0
75
°
C
25
°
C
--25
°
C
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0.2
0.4
0.6
75
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
ITR03016
Base-to-Emitter Voltage, VBE – V
ITR03015
Base-to-Emitter Voltage, VBE – V
No.781-3/4
2SA1208/2SC2910
7
5
VBE(sat) -- IC
2SA1208
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
7
5
VBE(sat) -- IC
2SC2910
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
3
2
3
2
1.0
7
5
25°C
--25
°C
1.0
7
5
--25
°C
75
°
C
25°C
75
°
C
3
5
7 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC – mA
7 --100
ITR03017
3
5
7
1.0
2
3
5
7
10
2
3
5
Collector Current, IC – mA
1000
7 100
ITR03018
ASO
3
2
PC -- Ta
2SA1208 / 2SC2910
ICP=140mA
Collector Dissipation, P
C
– mW
800
Collector Current, IC – mA
100
7
5
3
2
10
7
5
3
2
5
s
1m
s
m
10
ms
0
10
IC=70mA
600
DC
O
per
ati
on
400
2SA1208 / 2SC2910
DC Single pulse
(For PNP, minus sign is omitted.)
7
10
2
3
5
7
100
2
ITR03019
200
0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE – V
Ambient Temperature, Ta – ˚C
ITR03020
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
PS No.781-4/4
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