To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for use of high withstanding voltage current such as TV
vertical deflection output, audio output, and variable power
supplies.
• Complementary transistor with 2SC2958 and 2SC2959
V
CEO
= 140 V: 2SA1221/2SC2958
V
CEO
= 160 V: 2SA1222/2SC2959
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
−160
−140/–160
−5.0
−500
−1.0
1.0
150
−55
to +150
Unit
V
V
V
mA
A
W
°C
°C
* PW
≤
10 ms, duty cycle
≤
50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Symbol
I
CBO
I
EBO
h
FE
**
V
BE
**
V
CE(sat)
**
V
BE(sat)
**
C
ob
f
T
Conditions
V
CB
=
−100
V, I
E
= 0
V
EB
=
−5.0
V, I
C
= 0
V
CE
=
−2.0
V, I
C
=
−100
mA
V
CE
=
−5.0
V, I
C
=
−20
mA
I
C
=
−1.0
A, I
B
=
−0.2
A
I
C
=
−1.0
A, I
B
=
−0.2
A
V
CB
=
−10
V, I
E
= 0, f = 1.0 MHz
V
CE
=
−10
V, I
E
= 20 mA
30
100
−0.6
150
−0.64
−0.6
−1.1
24
45
MIN.
TYP.
MAX.
−200
−200
400
−0.7
−0.9
−0.3
40
V
V
V
pF
MHz
Unit
nA
nA
** Pulse test PW
≤
350
µ
s, duty cycle
≤
2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
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