Transistor
2SC2206
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1254
6.9±0.1
1.5
2.5±0.1
1.0
1.0
2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s
q
q
q
Features
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.5 R0.9
R0.9
0.4
1.0±0.1
R
0.
0.85
0.55±0.1
0.45±0.05
1.25±0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
C
EBO
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
30
20
5
30
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC–71
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Common emitter reverse transfer capacitance
Reverse transfer impedance
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NF
C
re
Z
rb
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 10V, I
E
= –1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 5MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –1mA, f = 2MHz
150
min
30
20
5
70
0.1
0.7
300
2.8
4
1.5
50
220
V
V
MHz
dB
pF
Ω
typ
max
Unit
V
V
V
*
h
FE
Rank classification
B
70 ~ 140
C
110 ~ 220
h
FE
Rank
4.1±0.2
4.5±0.1
7
1
Transistor
P
C
— Ta
500
12
Ta=25˚C
450
10
I
B
=100µA
12.5
2SC2206
I
C
— V
CE
15.0
V
CE
=10V
Ta=25˚C
I
C
— I
B
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
8
80µA
Collector current I
C
(mA)
18
400
10.0
6
60µA
7.5
4
40µA
5.0
2
20µA
2.5
0
0
6
12
0
0
20
40
60
80
100
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(
µA
)
I
B
— V
BE
120
V
CE
=10V
Ta=25˚C
100
50
60
I
C
— V
BE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
V
CE
=10V
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector current I
C
(mA)
Base current I
B
(
µA
)
80
40
Ta=75˚C
30
25˚C
–25˚C
60
Ta=75˚C
0.3
25˚C
0.1
0.03
0.01
0.1
–25˚C
40
20
20
10
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.4
0.8
1.2
1.6
2.0
0.3
1
3
10
30
100
Base to emitter voltage V
BE
(V)
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
— I
C
240
V
CE
=10V
400
350
300
250
200
150
100
50
0
0.1
0
– 0.1 – 0.3
f
T
— I
E
60
V
CB
=10V
6V
Z
rb
— I
E
Reverse transfer impedance Z
rb
(
Ω
)
Ta=25˚C
V
CB
=10V
f=2MHz
Ta=25˚C
Forward current transfer ratio h
FE
200
Transition frequency f
T
(MHz)
50
160
Ta=75˚C
25˚C
40
120
–25˚C
80
30
20
40
10
0.3
1
3
10
30
100
–1
–3
–10
–30
–100
0
– 0.1
– 0.3
–1
–3
–10
Collector current I
C
(mA)
Emitter current I
E
(mA)
Emitter current I
E
(mA)
2
Transistor
C
re
— V
CE
Common emitter reverse transfer capacitance C
re
(pF)
3.0
f=10.7MHz
Ta=25˚C
2.5
20
24
2SC2206
PG — I
E
f=100MHz
V
CE
=10V
Ta=25˚C
12
V
CB
=6V
f=100MHz
R
g
=50Ω
Ta=25˚C
NF — I
E
10
2.0
I
C
=3mA
1.5
1mA
16
Noise figure NF (dB)
–1
–3
–10
–30
–100
Power gain PG (dB)
8
12
6
1.0
8
4
0.5
4
2
0
0.1
0.3
1
3
10
30
100
0
– 0.1 – 0.3
0
– 0.1
– 0.3
–1
–3
–10
Collector to emitter voltage V
CE
(V)
Emitter current I
E
(mA)
Emitter current I
E
(mA)
b
ie
— g
ie
24
0
b
re
— g
re
Reverse transfer susceptance b
re
(mS)
y
ie
=g
ie
+jb
ie
V
CE
=10V
y
re
=g
re
+jb
re
V
CE
=10V
b
fe
— g
fe
Forward transfer susceptance b
fe
(mS)
f=10.7MHz
0
– 0.1mA
f=10.7MHz
58
10.7
–1mA 100
Input susceptance b
ie
(mS)
20
–4mA
16
I
E
=–1mA
10– 0.1
I
E
=–1mA
–20
58
–2mA
100
–7mA
100
–2mA
58
– 0.2
–40
12
– 0.3
58
–60
I
E
=–4mA
100
58
8
f=10.7MHz
4
– 0.4
100
–80
– 0.5
–100
y
fe
=g
fe
+jb
fe
V
CE
=10V
0
20
40
60
80
100
0
0
8
16
24
32
40
– 0.6
– 0.5
–120
– 0.4
– 0.3
– 0.2
– 0.1
0
Input conductance g
ie
(mS)
Reverse transfer conductance g
re
(mS)
Forward transfer conductance
g
fe
(mS)
b
oe
— g
oe
1.2
y
oe
=g
oe
+jb
oe
V
CE
=10V
Output susceptance b
oe
(mS)
1.0
0.8
I
E
=–1mA
100
0.6
58
0.4
0.2
f=10.7MHz
0
0
0.1
0.2
0.3
0.4
0.5
Output conductance g
oe
(mS)
3
