Ordering number:ENN1942A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1391/2SC3382
Low Noise AF Amp Applications
Features
· Adoption of FBET process.
· AF amp.
· Low-noise use.
Noise Test Circuit
T.U.T amp
Filter circuit
V.V
Rg
56kΩ
VG=36.5dB
VG=40.5dB
(at 1kHz)
0.45
0.5
0.6
2.0
0.45
0.44
14.0
Package Dimensions
unit:mm
2003B
[2SA1391/2SC3382]
5.0
4.0
4.0
C.R.O
1
2
3
5.0
( ) : 2SA1391
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.3
1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Ratings
(–)60
(–)50
(–)6
(–)200
(–)400
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)5V, IC=0
VCE=(–)6V, IC=(–)1mA
VCE=(–)6V, IC=(–)0.1mA
VCE=(–)6V, IC=(–)10mA
100*
70
250
(200)
MHz
MHz
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
560*
Unit
µA
µA
* : 2SA1391/2SC3382 are classified by 1mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4277TA, TS No.1942-1/5
2SA1391/2SC3382
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Noise Level
Noise Peak Level
Symbol
VCE(sat)
VBE(sat)
Cob
Conditions
IC=(–)100mA, IB=(–)10mA
IC=(–)100mA, IB=(–)10mA
VCB=(–)6V, f=1MHz
(–)60
(–)50
(–)6
40
(35)
280
(200)
2.7
(3.7)
Ratings
min
typ
max
(–)0.3
(–)1.0
Unit
V
V
pF
pF
V
V
V
mV
mV
mV
mV
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)10µA, IC=0
VNO(ave)
VCC=(–)30V, IC=(–)1mA, Rg=56k
Ω
, VG=77dB/1kHz
VNO(peak) VCC=(–)30V, IC=(–)1mA, Rg=56k
Ω
, VG=77dB/1kHz
--
20
IC -- VCE
A
A
60
µ
0
µ
--
µ
A
--7
--50
A
--40
µ
--30
µ
A
--20
µ
A
2SA1391
20
IC -- VCE
60
µ
A
2SC3382
Collector Current, IC – mA
Collector Current, IC – mA
--
16
16
50
µ
A
40
µ
A
12
--
12
30
µA
8
--
8
--10µA
20
µA
--
4
4
10µA
0
0
IB=0
--
10
--
20
--
30
--
40
--
50
Collector-to-Emitter Voltage, VCE – V
ITR03367
0
IB=0
0
10
20
30
40
50
ITR03368
Collector-to-Emitter Voltage, VCE – V
50
--
50
IC -- VCE
--400µA
--350µA
--300µA
IC -- VCE
A
0
µ
30
µ
A
250
µ
A
200
A
150
µ
2SC3382
--2
A
50
µ
2SA1391
--200
µ
A
Collector Current, IC – mA
Collector Current, IC – mA
--
40
40
--150
µA
--
30
30
--100µA
100µA
20
--
20
--50µA
50
µA
10
--
10
0
0
IB=0
--
0.2
--
0.4
--
0.6
--
0.8
Collector-to-Emitter Voltage, VCE – V
--
1.0
ITR03369
0
IB=0
0
0.2
0.4
0.6
0.8
1.0
ITR03370
Collector-to-Emitter Voltage, VCE – V
120
--
240
--
200
Collector Current, IC – mA
IC -- VBE
2SA1391
VCE=--6V
Ta=120
°
C
--40
°
C
IC -- VBE
2SC3382
VCE=6V
Ta=120
°
C
--40
°C
0.8
25
°
C
100
Collector Current, IC – mA
--
160
--
120
--
80
--
40
0
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR03371
0
0
0.2
0.4
0.6
25
°C
1.0
ITR03372
Base-to-Emitter Voltage, VBE – V
Base-to-Emitter Voltage, VBE – mV
No.1942-2/5
BE
5
2SA1391/2SC3382
ITR03371
Gain-Bandwidth Product, fT – MHz
2SA1391
VCE=--6V
1000
7
5
3
2
BE
ITR03372
fT -- IC
fT -- IC
2SC3382
VCE=6V
Gain-Bandwidth Product, fT – MHz
3
2
100
7
5
3
2
100
7
5
3
2
10
5
7
--
1.0
2
--
10 2 3 5 7
--
100 2 3
Collector Current, IC – mA
ITR03373
3
5
7
10 5
7 1.0
2
3
5
7
Collector Current, IC – mA
10
2
3
5
7 100
2
ITR03374
1000
7
5
hFE -- IC
Ta=120
°C
2SA1391
VCE=--6V
3
2
1000
hFE -- IC
2SC3382
VCE=6V
Ta=120
°C
25
°C
DC Current Gain, hFE
2
DC Current Gain, hFE
3
25
°C
--40
°C
7
5
3
2
100
7
5
3
2
100
7
5
3
2
--40
°C
10
--
0.1
2
2
3
5
--
1.0 2 3 5
--
10 2 3 5
--
100
Collector Current, IC – mA
2
3
5
10
0.1
2 3
5
1.0
2 3
5
10 2 3
5
100 2
3
ITR03375
100
7
5
Cob -- VCB
Collector Current, IC – mA
5 1000
ITR03376
Cob -- VCB
2SA1391
f=1MHz
2SC3382
f=1MHz
Output Capacitance, Cob – pF
Output Capacitance, Cob – pF
5
10
7
5
3
2
10
7
5
3
2
2
1.0
7
5
3
3
2
1.0
7
5
--
0.1
--
1.0 2 3 5
--
10 2 3
Collector-to-Base Voltage, VCB -- V
2
3
5
5
--
100
2
5
0.1
2
3
5
1.0
2
3
5
10
2
3
ITR03377
Collector-to-Base Voltage, VCB -- V
1000
7
100
ITR03378
5
--
10
5
VCE(sat) -- IC
2SA1391
hFE=10
VCE(sat) -- IC
2SC3382
hFE=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
3
2
5
3
2
--
1.0
5
3
2
100
7
5
3
2
10
0.1
--
0.1
5
3
2
2
3
5
--
0.01
--
0.1
--
1.0 2 3 5
--
10 2 3
Collector Current, IC – mA
5
--
100
2 3
2 3
5
ITR03379
Collector Current, IC – mA
1.0
2 3
5
10
2 3
5
100
2 3
5
ITR03380
No.1942-3/5
2SA1391/2SC3382
10
7
VBE(sat) -- IC
2SA1391 / 2SC3382
hFE=10
600
PC -- Ta
2SA1391 / 2SC3382
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
Collector Dissipation, P
C
– mW
2 3
5
2 3
5
2
3
5
100 2 3
ITR03381
500
3
2
400
300
1.0
7
5
200
100
3
0.1
0
1.0
10
0
20
40
60
80
100
120
140
160
Collector Current, IC – mA
Ambient Temperature, Ta – ˚C
ITR03382
ASO
7
5
3
ASO
2SA1391
1000
5
ICP=–400mA
IC=–200mA
2SC3382
ICP=400mA
IC=200mA
Collector Current, IC – mA
Collector Current, IC – mA
2
1
1m
10
0ms
s
0m
s
DC
op
era
3
2
100
5
3
2
10
5
3
2
--
100
7
5
3
2
DC
10
100
ms
ms
ope
rat
ion
1m
s
tio
n
--
10
7
5
3
2
--
1.0
100k
5
2
3
5
--
10
Collector-to-Emitter Voltage, VCE – V
2
3
5
7
7
--
100
1.0
1.0
2
3
5
7
10
2
3
5
ITR03383
100k
5
Collector-to-Emitter Voltage, VCE – V
100
ITR03384
7
2SA1391
NF -- Rg, IC
NF -- Rg, IC
2SC3382
VCE=6V
f=10Hz
Signal Source Resistanc,Rg –
Ω
Signal Source Resistanc,Rg –
Ω
3
2
f=10Hz
∆f=1
Hz
VCE=--6V
B
8d
dB
B
12
6d
B
4d
3
2
15
dB
8d
14
dB
d
=1
NF
10k
10k
5
3
2
B
B
4d
B
3d
B
2d
2d
B
5
3
2
1.0k
5
3
2
0.1k
3
B
=1
.5d
2d
B
3d
B
4d
B
B
8d
15
dB
5
--0.01
2
3
5
NF
1.0k
5
3
2
6d
8d
B
B
14
dB
4d
B
2d
B
12
B
--0.1
2
3
5
Collector Current, IC – mA
100k
5
2 3
--1.0
ITR03385
0.1k
0.001 2 3 5
dB
0.01
2 3
5
0.1
2 3
5
1.0
2 3
Collector Current, IC – mA
100k
10
ITR03386
5
Signal Source Resistanc,Rg –
Ω
3
2
10k
5
3
2
1.0k
5
3
2
0.1k
3
Signal Source Resistanc,Rg –
Ω
2SA1391
f=100Hz
∆f=1
Hz
VCE=--6V
NF -- Rg, IC
dB
15
B
8d
B
6d
B
4d
NF -- Rg, IC
2SC3382
VCE=6V
f=100Hz
NF
5
3
2
10k
5
3
2
1.0k
5
3
2
dB
10
B
8d
B
6d
B
4d
2d
NF
=1
B
2d
NF
=1
dB
2d
B
B
2d
dB
B
=1
d
B
15d
B
5
--0.01
4d
B
6d
B
8d
B
2
3
5
--0.1
2
3
5
2 3
--1.0
ITR03387
12
d
14
dB
4d
6d
B
8d
B
B
B
0.1k
0.001 2 3
5
0.01 2 3
5
0.1 2 3
5
1.0
2 3
Collector Current, IC – mA
Collector Current, IC – mA
5 10
ITR03388
NF
R
I
NF
R
I
No.1942-4/5
2SA1391/2SC3382
100k
5
Signal Source Resistanc,Rg –
Ω
3
2
10k
5
3
2
1.0k
5
3
2
0.1k
3
B
Signal Source Resistanc,Rg –
Ω
2SA1391
f=
∆
f
1kH
V =1H
z
CE
z
=--
6V
NF -- Rg, IC
15
100k
5
3
2
10k
5
3
2
1.0k
5
3
2
NF -- Rg, IC
2SC3382
VCE=6V
f=1kHz
dB
8d
2d
B
1d
4d
B
8d
B
6d
dB
4
NF
B
2d
=1
B
dB
B
NF
1d
2d
=0
B
.7d
B
NF
=1
d
2d
B
B
4d
B
6d
8d
B
B
B
4d
B
15
dB
--0.01
8d
2
B
3
5
--0.1
2
3
5
2 3
--1.0
ITR03389
14
dB
12
dB
5
0.1k
0.001 2 3 5
0.01 2 3
5
0.1 2 3
5
1.0
2 3
5
10
Collector Current, IC – mA
100k
5
Collector Current, IC – mA
100k
ITR03390
2SA1391
NF -- Rg, IC
15
8d
B
dB
5
2SC3382
VCE=6V
f=1kHz
NF -- Rg, IC
B
8d
B
6d
Signal Source Resistanc,Rg –
Ω
Signal Source Resistanc,Rg –
Ω
3
2
10k
5
3
2
1.0k
5
3
2
0.1k
3
NF
3
2
10k
5
3
2
1.0k
5
3
2
0.1k
0.001 2 3 5
4d
=0
NF
B
=0
.5d
B
0.7
1d
dB
B
2d
0.
1d
7d
2d
B
NF
4d
B
=0
.5
d
1d
B
.5d
B
B
B
B
B
2d
B
4d
15
dB
5
--0.01
1d
2d
B
B
4d
6d
8d
B
B
8d
B
2
3
5
--0.1
2
f=10kHz,
∆f=1
Hz
VCE=--6V
3
5
2 3
--1.0
ITR03391
B
B
0.01 2 3
5
0.1 2
3 5
1.0
2 3
Collector Current, IC – mA
Collector Current, IC – mA
10
ITR03392
5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.1942-5/5
