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2SA1419S-TD-H

Bipolar Transistors - BJT BIP PNP 1.5A 160V

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
包装说明
SMALL OUTLINE, R-PSSO-F3
针数
3
制造商包装代码
419AU
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
1 week
外壳连接
COLLECTOR
最大集电极电流 (IC)
1.5 A
集电极-发射极最大电压
160 V
配置
SINGLE
最小直流电流增益 (hFE)
140
JEDEC-95代码
TO-243AA
JESD-30 代码
R-PSSO-F3
JESD-609代码
e6
湿度敏感等级
1
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
PNP
表面贴装
YES
端子面层
Tin/Bismuth (Sn/Bi)
端子形式
FLAT
端子位置
SINGLE
晶体管元件材料
SILICON
标称过渡频率 (fT)
120 MHz
Base Number Matches
1
文档预览
Ordering number : EN2007C
2SA1419/2SC3649
Bipolar Transistor
(–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP
Features
http://onsemi.com
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
( ) : 2SA1419
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
When mounted on ceramic substrate (250mm
×0.8mm)
2
Specifications
Parameter
Collector-to-Base Voltage
Absolute Maximum Ratings
at Ta=25°C
Conditions
Ratings
(-
-)180
(-
-)160
(-
-)6
(--)1.5
(-
-)2.5
500
1.5
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
2SA1419S-TD-E
2SA1419S-TD-H
2SA1419T-TD-E
2SA1419T-TD-H
2SC3649S-TD-E
2SC3649S-TD-H
2SC3649T-TD-E
2SC3649T-TD-H
Packing Type: TD
2.5
1.0
4.0
TD
1
0.4
0.5
1.5
3.0
2
3
0.4
Marking
LOT No.
RANK
CE
2SC3649
2
1
3
2SC3649
AE
RANK
0.75
2SA1419
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
1
PCP
3
2SA1419
Semiconductor Components Industries, LLC, 2013
August, 2013
82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/7
LOT No.
2SA1419 / 2SC3649
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)120V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)100mA
VCE=(--)5V, IC=(--)10mA
VCE=(--)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)500mA, IB=(--)50mA
IC=(--)500mA, IB=(--)50mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
(-
-)180
(-
-)160
(-
-)6
(40)40
(0.7)1.2
(40)80
100*
80
120
(22)14
(--200)130
(-
-)0.85
(--500)450
(-
-)1.2
MHz
pF
mV
V
V
V
V
ns
μs
ns
Ratings
min
typ
max
(--)1
(--)1
400*
Unit
μA
μA
*
: The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
50Ω
+
100μF
--5V
+
470μF
100V
IB1
IB2
RB
RL
IC=10IB1=--10IB2=0.7A
(For PNP, the polarity is reversed)
Ordering Information
Device
2SA1419S-TD-E
2SA1419S-TD-H
2SA1419T-TD-E
2SA1419T-TD-H
2SC3649S-TD-E
2SC3649S-TD-H
2SC3649T-TD-E
2SC3649T-TD-H
Package
PCP
PCP
PCP
PCP
PCP
PCP
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
No.2007-2/7
2SA1419 / 2SC3649
--1.8
--1.6
IC -- VCE
2SA1419
1.8
1.6
IC -- VCE
2SC3649
Collector Current, IC -- A
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
A
--80m
A
--60m
A
--40m
A
--20m
A
--10m
--5mA
--2mA
--1mA
Collector Current, IC -- A
--1.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
50mA
40mA
30mA
20mA
10mA
5mA
2mA
1mA
IB=0mA
--1
--2
--3
--4
--5
ITR03571
IB=0mA
0
0
1
2
3
4
5
ITR03572
Collector-to-Emitter Voltage, VCE -- V
--1.0
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
1.0
IC -- VCE
Collector Current, IC -- A
Collector Current, IC -- A
4.5
--0.8
--0.6
--0.4
A
--5.0m
--4.5mA
--4.0mA
--3.5mA
--3.0mA
--2.5mA
--2.0mA
0.8
mA
5.0
m
2SA1419
4.0mA
3.5mA
3.0mA
2.5mA
2SC3649
0.6
A
2.0mA
0.4
--1.5mA
1.5mA
--1.0mA
--0.2
1.0mA
0.2
--0.5mA
0
0
0.5mA
0
IB=0mA
--
10
--
20
--
30
--
40
Collector-to-Emitter Voltage, VCE -- V
IB=0mA
0
10
20
30
40
50
ITR03574
--
50
ITR03573
--
1.6
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
1.6
IC -- VBE
2SA1419
VCE=--5V
Collector Current, IC -- A
1.2
2SC3649
VCE=5V
Collector Current, IC -- A
--
1.2
--
0.8
0.8
5
°
C
25
°
C
--25
°
C
--
0.4
0.4
0
0
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
--
1.2
Base-to-Emitter Voltage, VBE -- V
ITR03575
0
0
0.2
0.4
0.6
Ta=
7
5
°
C
25
°
C
--25
°
C
0.8
Ta=
7
1.0
1.2
ITR03576
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
7
5
hFE -- IC
2SA1419
VCE=--5V
2SC3649
VCE=5V
Ta=75
°
C
DC Current Gain, hFE
2
Ta=75
°
C
DC Current Gain, hFE
3
3
2
100
7
5
3
2
25
°
C
--25
°
C
100
7
5
3
2
25
°
C
--25
°
C
10
--
5
--
7
--
0.01
--
2
--
3
--
5
--
7
--
0.1
--
2
--
3
--
5
--
7
--
1.0
--
2
--
3
ITR03577
Collector Current, IC -- A
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
ITR03578
No.2007-3/7
2SA1419 / 2SC3649
5
f T -- IC
2SA1419 / 2SC3649
100
7
Cob -- VCB
2SA1419 / 2SC3649
Gain-Bandwidth Product, f T -- MHz
3
2
2SC3649
Output Capacitance, Cob -- pF
5
2SA1419
100
7
5
3
2
3
2
2SA
141
9
2SC
10
7
5
364
9
For PNP, minus sign is omitted
10
0.01
2
3
5
7
0.1
2
3
5
7
For PNP, minus sign is omitted
3
1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- A
3
2
2
1.0
ITR03579
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
3
2
100
ITR03580
7
VCE(sat) -- IC
2SA1419
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SC3649
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--
1000
7
5
3
2
1000
7
5
3
2
--
100
7
5
3
2
7
25
°
C
°
C
Ta=75
--25
°
C
100
7
5
3
25
°
C
Ta=75
°
C
--25
°
C
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
--
0.01
2
3
--
0.1 2 3 5
Collector Current, IC -- A
5
7
7
--
1.0
2
3
2
ITR03581
10
7
--
10
7
VBE(sat) -- IC
Collector Current, IC -- A
ITR03582
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SA1419
IC / IB=10
2SC3649
IC / IB=10
5
3
2
3
2
Ta=--25
°
C
--
1.0
7
5
Ta=--25
°
C
1.0
7
5
25
°
C
75
°
C
25
°
C
7 0.01
2
3
5
7 0.1
2
75
°
C
3
5
7 1.0
2
3
3
7
--
0.01
2
3
2 3
5
--
0.1
Collector Current, IC -- A
5
7
7
--
1.0
2
3
3
ITR03583
1.8
1.6
Collector Current, IC -- A
ITR03584
5
3
2
ASO
ICP=2.5A
IC=1.5A
PC -- Ta
2SA1419 / 2SC3649
Collector Dissipation, PC -- W
Collector Current, IC -- A
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
2SA1419 / 2SC3649
1m
10
s
m
s
10
0m
s
DC
op
era
1.4
1.2
1.0
0.8
0.6
M
ou
nt
ed
on
tio
ac
er
am
n
ic
bo
ar
d
(2
No h
0.4
0.2
0
50
m
eat s
ink
For PNP, minus sign is omitted
Single pulse Ta=25
°
C
Mounted on a ceramic board (250mm
2
✕0.8mm)
7 1.0
2
3
5
7 10
2
3
5
7 100
2
3
m
2
0.8
m
m
)
160
0
20
40
60
80
100
120
140
Collector-to-Emitter Voltage, VCE -- V
ITR03585
Ambient Temperature, Ta --
°
C
ITR03586
No.2007-4/7
2SA1419 / 2SC3649
Bag Packing Specification
2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H,
2SC3649T-TD-E, 2SC3649T-TD-H
No.2007-5/7
查看更多>
参数对比
与2SA1419S-TD-H相近的元器件有:2SC3649S-TD-E、2SC3649T-TD-H、2SA1419S-TD-E、CRW12062.21MOHM0.5%100PPMTAPE、2SC3649T-TD-E。描述及对比如下:
型号 2SA1419S-TD-H 2SC3649S-TD-E 2SC3649T-TD-H 2SA1419S-TD-E CRW12062.21MOHM0.5%100PPMTAPE 2SC3649T-TD-E
描述 Bipolar Transistors - BJT BIP PNP 1.5A 160V Bipolar Transistors - BJT BIP NPN 1.5A 160V Bipolar Transistors - BJT BIP NPN 1.5A 160V Bipolar Transistors - BJT BIP PNP 1.5A 160V Fixed Resistor, Metal Glaze/thick Film, 0.25W, 2210000ohm, 600V, 0.5% +/-Tol, -100,100ppm/Cel, 1206 Bipolar Transistors - BJT BIP NPN 1.5A 160V
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
包装说明 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMT, 1206 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant unknown not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
端子数量 3 3 3 3 2 3
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMT SMALL OUTLINE
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor - ON Semiconductor
针数 3 3 3 3 - 3
制造商包装代码 419AU 419AU 419AU 419AU - 419AU
Factory Lead Time 1 week 7 weeks 2 weeks 2 weeks - 4 weeks
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR - COLLECTOR
最大集电极电流 (IC) 1.5 A 1.5 A 1.5 A 1.5 A - 1.5 A
集电极-发射极最大电压 160 V 160 V 160 V 160 V - 160 V
配置 SINGLE SINGLE SINGLE SINGLE - SINGLE
最小直流电流增益 (hFE) 140 140 200 140 - 200
JEDEC-95代码 TO-243AA TO-243AA TO-243AA TO-243AA - TO-243AA
JESD-30 代码 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 - R-PSSO-F3
JESD-609代码 e6 e6 e6 e6 - e6
湿度敏感等级 1 1 1 1 - 1
元件数量 1 1 1 1 - 1
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
极性/信道类型 PNP NPN NPN PNP - NPN
表面贴装 YES YES YES YES - YES
端子面层 Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi) - Tin/Bismuth (Sn/Bi)
端子形式 FLAT FLAT FLAT FLAT - FLAT
端子位置 SINGLE SINGLE SINGLE SINGLE - SINGLE
晶体管元件材料 SILICON SILICON SILICON SILICON - SILICON
标称过渡频率 (fT) 120 MHz 120 MHz 120 MHz 120 MHz - 120 MHz
Base Number Matches 1 1 1 1 - 1
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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