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Ordering number:EN2926A

PNP Epitaxial Planar Silicon Transistor

2SA1641

High-Current Switching Applications

Features

· Adoption of FBET, MBIT processes.

· Low saturation voltage.

· Fast switching speed.

· Large current capacity.

· Small and slim package making it easy to make

2SA1641-used set smaller.

Package Dimensions

unit:mm

2045B

[2SA1641]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

unit:mm

2044B

[2SA1641]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82098HA (KT)/8219MO/4049MO, TS No.2926-1/4

2SA1641

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Colletor Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tc=25˚C

Conditions

Ratings

–25

–20

–5

–8

–12

–1.5

150

–55 to +150

Unit

˚C

Tstg

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector Output Capacitance

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

Symbol

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

Cob

VCB=–20V, IE=0

VEB=–4V, IC=0

VCE=–2V, IC=–500mA

VCE=–2V, IC=–6A

VCE=–2V, IC=–500mA

IC=–5A, IB=–250mA

VCB=–10V, f=1MHz

–25

–20

–5

200

300

800

150

100*

200

–220

–1

–400

–1.3

MHz

Conditions

Ratings

min

typ

max

–1

400*

Unit

µA

V(BR)CBO IC=–10µA, IE=0

V(BR)CEO IC=–1mA, RBE=∞

V(BR)EBO

ton

tstg

IE=–10µA, IC=0

See specified Test Circuit

* : The 2SA1641 is classified by 500mA h

as follows :

100

200

140

280

200

400

Switching Time Test Circuit

20I

=–20I

=–5A

Unit (resisitance :

Ω,

capacitance : F)

No.2926-2/4

2SA1641

No.2926-3/4

2SA1641

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any and all SANYO products described or contained herein fall under strategic

products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of

Japan, such products must not be exported without obtaining export license from the Ministry of

International Trade and Industry in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 1998. Specifications and information herein are subject to

change without notice.

PS No.2926-4/4

参数对比

与2SA1641TTP-FA相近的元器件有：2SA1641RTP、2SA1641RTP-FA、2SA1641TTP、2SA1641TP-FA、2SA1641TP、2SA1641STP、2SA1641STP-FA。描述及对比如下：

型号	2SA1641TTP-FA	2SA1641RTP	2SA1641RTP-FA	2SA1641TTP	2SA1641TP-FA	2SA1641TP	2SA1641STP	2SA1641STP-FA
描述	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN	Small Signal Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 4 PIN
Objectid	1543500882	1543500877	1543500876	1543500883	1543500880	1543500881	1543500879	1543500878
包装说明	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
针数	4	3	4	3	4	3	3	4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
集电极-发射极最大电压	20 V	20 V	20 V	20 V	20 V	20 V	20 V	20 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	200	100	100	200	60	60	140	140
JESD-30 代码	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2
元件数量	1	1	1	1	1	1	1	1
端子数量	2	3	2	3	2	3	3	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	YES	NO	YES	NO	NO	YES
端子形式	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
最大关闭时间（toff）	950 ns	950 ns	950 ns	950 ns	950 ns	950 ns	950 ns	950 ns
最大开启时间（吨）	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns	300 ns
最大功率耗散 (Abs)	15 W	15 W	15 W	15 W	-	-	15 W	15 W