Ordering number : EN3011A
2SA1682
SANYO Semiconductors
DATA SHEET
PNP Epitaxial Planar Silicon Transistor
2SA1682
Features
•
•
•
•
TV Camera Deflection,
High-Voltage Driver Applications
High breakdown voltage (VCEO
≥300V).
Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).
Excellent DC current gain ratio (hFE ratio : 1.0 typ).
Adoption of FBET process.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
--300
--300
--5
--50
--100
250
150
--55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=-
-200V, IE=0A
VEB=--4V, IC=0A
Ratings
min
typ
max
--0.1
--0.1
Unit
μA
μA
Marking : CS
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30508CB TI IM TC-00001239 / N1003TN (KT)/5189MO, TS No.3011-1/4
2SA1682
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
Revese Transfer Capacitance
DC Current Gain Ratio
Symbol
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
Cre
hFE ratio
Conditions
VCE=-
-6V, IC=--0.1mA
VCE=-
-6V, IC=--1mA
VCE=-
-30V, IC=--10mA
IC=-
-10mA, IB=--1mA
IC=-
-10mA, IB=--1mA
IC=-
-10μA, IE=0A
IC=-
-1mA, RBE=∞
IE=--10μA, IC=0A
VCB=-
-30V, f=1MHz
VCB=-
-30V, f=1MHz
hFE1 / hFE2
--300
--300
--5
2.4
1.5
1.0
Ratings
min
100*
100
70
--1.0
--1.0
MHz
V
V
V
V
V
pF
pF
typ
max
320*
Unit
*
: The 2SA1682 is classified by 0.1mA hFE as follows :
Rank
4
5
hFE
100 to 200
160 to 320
Package Dimensions
unit : mm (typ)
7013A-009
2.9
0.1
0.5
3
2.5
1.5
0.5
1
0.95
2
0.4
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
0.05
1.1
0.3
--60
IC -- VBE
VCE=--6V
1000
7
5
3
hFE -- IC
VCE=--6V
--50
Collector Current, IC -- mA
Ta=75
°
C
25
°
C
--25
°
C
DC Current Gain, hFE
2
100
7
5
3
2
10
Ta=75
°
C
--40
25
°
C
--25
°
C
--30
--20
--10
7
5
3
0
--0.2
--0.4
--0.6
--0.8
--1.0
ITR04075
5
--0.1
2
3
5
--1.0
2
3
5
--10
2
3
5 --100
ITR04076
0
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
No.3011-2/4
2SA1682
2
f T -- IC
VCE=--30V
3
2
Cob -- VCB
f=1MHz
Gain-Brandwidth Product, f T -- MHz
100
7
5
Output Capacitance, Cob -- pF
7
2
5
7
2
3
5
7
10
7
5
3
2
3
2
1.0
7
5
10
7
--1.0
3
--10
7 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC -- mA
3
ITR04077
--10
Collector-to-Base Voltage, VCB -- V
7 --100
2
ITR04078
Cre -- VCB
f=1MHz
VCE(sat) -- IC
Reverse Transfer Capacitance, Cre -- pF
2
7
IC / IB=10
Saturation Voltage, VCE(sat) -- V
5
3
2
--1.0
7
5
3
2
10
7
3
2
Collector-to-Emitter
5
25
°C
Ta=75
°
C
1.0
7
5
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
ITR04079
--0.1
7
5
7
--25
°
C
--1.0
2
3
5
7
--10
2
3
5
Collector-to-Base Voltage, VCB -- V
--10
7
Collector Current, IC -- mA
280
ITR04080
VBE(sat) -- IC
PC -- Ta
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
Collector Dissipation, PC -- mW
7
2
3
5
7
240
200
3
2
160
120
--1.0
25
°C
Ta=--25
°
C
80
7
5
3
7
--1.0
2
3
5
--10
75
°
C
40
0
0
20
40
60
80
100
120
140
160
Collector Current, IC -- mA
ITR04081
Ambient Temperature, Ta --
°C
ITR04082
No.3011-3/4
2SA1682
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.
PS No.3011-4/4
