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2SA1708S-AN

Bipolar Transistors - BJT BIP PNP 1A 100V

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
针数
3
制造商包装代码
135AD
Reach Compliance Code
compliant
ECCN代码
EAR99
端子面层
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Base Number Matches
1
文档预览
Ordering number : EN3094B
2SA1708/2SC4488
Bipolar Transistor
(-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single NMP
Features
http://onsemi.com
Adoption of FBET, MBIT processes
High breakdown voltage, large current capacity
Fast switching speed
( )2SA1708
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(-
-)120
(-
-)100
(-
-)6
(--)1
(--)2
1
150
--55 to +150
Unit
V
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7540-001
2.5
6.9
1.45
1.05
Product & Package Information
• Package : NMP(Taping)
• JEITA, JEDEC : SC-71
• Minimum Packing Quantity : 2,500 pcs./box
2SA1708S-AN
2SA1708T-AN
2SC4488S-AN
2SC4488T-AN
Marking(NMP(Taping))
A1708
RANK
LOT No.
4.5
C4488
RANK
LOT No.
1.0
0.6
1.0
0.5
0.9
15.0
1
2
3
0.45
1.0
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
NMP(Taping)
Electrical Connection
2
2
3
3
1
2SA1708
2SC4488
1
Semiconductor Components Industries, LLC, 2013
September, 2013
82912 TKIM TC-00002802/22509EA MSIM TC-00001859/93003TN (KT)/83098HA(KT)/4249MO, TS No.3094-1/8
2SA1708 / 2SC4488
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)100mA
VCE=(--)10V, IC=(--)100mA
VCB=(--)10V, f=1MHz
IC=(--)400mA, IB=(--)40mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
(-
-)120
(-
-)100
(--)6
(80)80
(700)850
(40)50
140*
120
(13)8.5
(--0.2)0.1
(--)0.85
(--0.6)0.4
(-
-)1.2
Ratings
min
typ
max
(--)100
(--)100
400*
MHz
pF
V
V
V
V
V
ns
ns
ns
Unit
nA
nA
* : The 2SA1708/2SC4488 are classified by 100mA hFE as follows :
Rank
hFE
S
140 to 280
T
200 to 400
Switching Time Test Circuit
2SA1708
IB1
IB2
INPUT
PW=20μs
D.C.≤1%
50Ω
VR
RB
+
100μF
VBE=5V
+
470μF
VCC= --50V
OUTPUT
RL
2SC4488
IB1
IB2
INPUT
PW=20μs
D.C.≤1%
50Ω
VR
RB
+
100μF
VBE= --5V
+
470μF
VCC=50V
OUTPUT
RL
IC=10IB1= --10IB2= --400mA
IC=10IB1= --10IB2=400mA
Ordering Information
Device
2SA1708S-AN
2SA1708T-AN
2SC4488S-AN
2SC4488T-AN
Package
NMP(Taping)
NMP(Taping)
NMP(Taping)
NMP(Taping)
Shipping
2,500pcs./box
2,500pcs./box
2,500pcs./box
2,500pcs./box
Pb Free
memo
No.3094-2/8
2SA1708 / 2SC4488
--1.0
IC -- VCE
2SA1708
5m
--2
A
1.0
IC -- VCE
2SC4488
30m
A
0
--2
mA
5
--1
mA
mA
--10
25m
A
Collector Current, IC -- A
Collector Current, IC -- A
--0.8
0.8
20mA
15mA
10mA
--0.6
--3
A
0m
--5mA
0.6
5mA
--3mA
--0.4
3mA
0.4
--2mA
--1mA
2mA
1mA
--0.2
0.2
0
0
IB=0mA
--1
--2
--3
--4
--5
ITR04322
0
0
1
2
3
IB=0mA
4
5
ITR04323
Collector-to-Emitter Voltage, VCE -- V
--500
IC -- VCE
--2.0m
Collector-to-Emitter Voltage, VCE -- V
500
IC -- VCE
2.0mA
A
Collector Current, IC -- mA
400
Collector Current, IC -- mA
--400
2.5
m
m
--2.5
A
A
2SA1708
2SC4488
--1.5mA
--300
1.5mA
300
--1.0mA
--200
1.0mA
200
--0.5mA
--100
0.5mA
100
0
0
IB=0mA
--10
--20
--30
--40
--50
ITR04324
0
0
10
20
30
IB=0mA
40
50
ITR04325
Collector-to-Emitter Voltage, VCE -- V
--1.2
Collector-to-Emitter Voltage, VCE -- V
1.2
IC -- VBE
2SA1708
VCE= --5V
Collector Current, IC -- A
IC -- VBE
2SC4488
VCE=5V
--1.0
1.0
Collector Current, IC -- A
--0.8
0.8
--0.6
0.6
--0.4
Ta=75
°
C
25
°
C
--25
°
C
0.4
--0.2
0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0
0.2
0.4
0.6
Ta=75
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
ITR04327
Base-to-Emitter Voltage, VBE -- V
1000
7
5
ITR04326
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
2SA1708
VCE= --5V
DC Current Gain, hFE
Ta=75°C
--25
°
C
2SC4488
VCE=5V
DC Current Gain, hFE
3
2
25
°C
3
2
Ta=75
°C
--25
°
C
25
°
C
100
7
5
3
2
10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
100
7
5
3
2
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
ITR04328
Collector Current, IC -- A
ITR04329
No.3094-3/8
2SA1708 / 2SC4488
3
f T -- IC
Gain-Bandwidth Product, f T -- MHz
2SA1708
VCE= --10V
3
2
f T -- IC
2SC4488
VCE=10V
Gain-Bandwidth Product, f T -- MHz
2
100
7
5
100
7
5
3
2
3
2
10
7 --0.01
2
3
5
7
--0.1
2
3
5
10
Collector Current, IC -- A
100
7
--1.0
ITR04330
100
7
7
0.01
2
3
5
7
0.1
2
3
5
Cob -- VCB
Collector Current, IC -- A
7 1.0
ITR04331
Cob -- VCB
2SA1708
f=1MHz
Output Capacitance, Cob -- pF
7
5
2SC4488
f=1MHz
Output Capacitance, Cob -- pF
5
3
2
3
2
10
7
5
10
7
5
3
2
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
ITR04332
V
3
2
7
1.0
2
3
5
7
10
2
3
5
7 100
2
ITR04333
V
Collector-to-Base Voltage, VCB --
--1000
VCE(sat) -- IC
Collector-to-Base Voltage, VCB --
1000
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
2SA1708
IC / IB=10
7
5
3
2
2SC4488
IC / IB=10
--100
7
5
3
2
7 --0.01
2
3
5
7 --0.1
2
3
5
100
7
5
3
2
25
5
°
C
Ta=7
°
C
Ta=75
°
C
25
°
C
C
--25
°
--25
°
C
7 0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
--10
7
7 --1.0
2
ITR04334
10
VBE(sat) -- IC
Collector Current, IC -- A
7 1.0
2
ITR04335
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SA1708
IC / IB=10
7
5
2SC4488
IC / IB=10
3
2
3
2
--1.0
7
5
3
Ta= --25
°
C
1.0
7
5
3
Ta= --25
°
C
25
°
C
75
°
C
25
°
C
75
°
C
7 0.01
2
3
5
7
2
3
5
7
2
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
0.1
1.0
Collector Current, IC -- A
ITR04336
Collector Current, IC -- A
ITR04337
No.3094-4/8
2SA1708 / 2SC4488
3
2
1.0
ASO
ICP
=2.0A
1.2
PC -- Ta
2SA1708 / 2SC4488
Collector Current, IC -- A
s
5
3
2
0.1
5
3
2
0.01
5
5
Collector Dissipation, PC -- W
IC=1.0A
10
0m
2SA1708 / 2SC4488
10
1m
ms
s
1.0
DC
0.8
op
era
tio
n
0.6
0.4
Single pulse
Ta=25°C
(For PNP, minus sign is omitted.)
7
1.0
2
3
5
7
10
2
3
5
0.2
0
7 100
2
V
ITR04338
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE --
Ambient Temperature, Ta --
°C
ITR04339
No.3094-5/8
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参数对比
与2SA1708S-AN相近的元器件有:2SA1708T-AN。描述及对比如下:
型号 2SA1708S-AN 2SA1708T-AN
描述 Bipolar Transistors - BJT BIP PNP 1A 100V Bipolar Transistors - BJT BIP PNP 1A 100V
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
针数 3 3
制造商包装代码 135AD 135AD
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
端子面层 Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Base Number Matches 1 1
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