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DATA SHEET
SILICON POWER TRANSISTOR
2SA1741
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1741 is a power transistor developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
. This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥
100 (V
CE
=
−2
V, I
C
=
−1
A)
V
CE(sat)
≤
0.3 V (I
C
=
−3
A, I
B
=
−0.15
A)
• Full-mold package that does not require an insulating board or
bushing when mounting.
Electrode Connection
1. Base
2. Collector
3. Emitter
.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
−100
−60
−7.0
−5.0
−10
−2.5
25
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
* PW
≤
300
µ
s, duty cycle
≤
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16125EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1741
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector to emitter voltage
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
Storage time
Fall time
Symbol
V
CEO(SUS)
V
CEX(SUS)
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)1
*
V
BE(sat)2
*
C
ob
f
T
t
on
t
stg
t
f
Conditions
I
C
=
−3.0
A, I
B
=
−0.3
A, L = 1 mH
I
C
=
−3.0
A, I
B1
=
−I
B2
=
−0.3
A,
V
BE(OFF)
= 1.5 V, L = 180
µ
H, clamped
V
CB
=
−60
V, I
E
= 0
V
CE
=
−60
V, R
BE
= 50
Ω,
Ta = 125°C
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V,
Ta = 125
°C
V
EB
=
−5.0
V, I
C
= 0
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−3.0
A
I
C
=
−3.0
A, I
B
=
−0.15
A
I
C
=
−4.0
A, I
B
=
−0.2
A
I
C
=
−3.0
A, I
B
=
−0.15
A
I
C
=
−4.0
A, I
B
=
−0.2
A
V
CB
=
−10
V, I
E
= 0, f = 1.0 MHz
V
CE
=
−10
V, I
C
=
−0.5
A
I
C
=
−3.0
A, R
L
= 17
Ω,
I
B1
=
−I
B2
=
−0.15
A, V
CC
≅ −50
V
Refer to the test circuit.
130
80
0.3
1.5
0.3
100
100
60
−0.3
−0.5
−1.2
−1.5
V
V
V
V
pF
MHz
400
MIN.
−60
−60
−10
−1.0
−10
−1.0
−10
TYP.
MAX.
Unit
V
V
µ
A
mA
µ
A
mA
µ
A
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE2
M
100 to 200
L
150 to 300
K
200 to 400
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(°C)
Case Temperature T
C
(°C)
2
Data Sheet D16125EJ1V0DS
I
C
Derating dT (%)
2SA1741
Single pulse
Collector Current I
C
(A)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Transient Thermal Resistance R
th
Without heatsink
With infinite heatsink
Pulse Width (s)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Data Sheet D16125EJ1V0DS
3
