DATA SHEET
DARLINGTON POWER TRANSISTOR
2SA1840
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such
as PWM control for pulse motors or brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Auto-mounting possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• On-chip C-to-E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
**
T
j
T
stg
Ratings
−100
−100
−8.0
–
+5.0
–
+10
−0.5
1.8
150
−55
to +150
Unit
V
V
V
A
A
A
W
°C
°C
* PW
≤
300
µ
s, duty cycle
≤
10%
** T
a
= 25°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15589EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1840
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Collector capacitance
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
*
V
CE(sat)
*
V
BE(sat)
*
t
on
t
stg
t
f
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Conditions
V
CB
=
−100
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
=
−2.0
V, I
C
=
−2.0
A
V
CE
=
−2.0
V, I
C
=
−4.0
A
I
C
=
−2.0
A, I
B
=
−2.0
mA
I
C
=
−2.0
A, I
B
=
−2.0
mA
I
C
=
−2.0
A, I
B1
=
−I
B2
=
−2.0
mA
R
L
= 25
Ω,
V
CC
≅ −50
V
Refer to the test circuit.
0.7
45
2,000
500
−0.9
−1.5
0.7
1.7
−1.5
−2.0
MIN.
TYP.
MAX.
−1.0
−5.0
20,000
Unit
µ
A
mA
−
−
V
V
µ
s
µ
s
µ
s
pF
* Pulse test PW
≤
350
µ
s, Duty Cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE1
M
2,000 to 5,000
L
4,000 to 10,000
K
8,000 to 20,000
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
2
Data Sheet D15589EJ2V0DS
2SA1840
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
IC Derating dT (%)
Ambient Temperature T
a
(°C)
Case Temperature T
c
(°C)
Single pulse
Transient Thermal Resistance r
th(j-a)
(
°
C/W)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Pulse Width PW (s)
Single pulse
Collector Current I
C
(A)
DC Current Gain h
FE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Data Sheet D15589EJ2V0DS
3
2SA1840
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(A)
Base Saturation Voltage V
BE(sat)
(V)
Collector Current I
C
(A)
Collector Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
4
Data Sheet D15589EJ2V0DS
2SA1840
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D15589EJ2V0DS
5
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