2SA1958
Silicon PNP Epitaxial
Application
High frequency amplifier
Features
•
Excellent high frequency characteristics
f
T
= 500 MHz typ
•
High voltage and low output capacitance
V
CEO
= –150 V, Cob = 5.5 pF typ
•
Suitable for wide band video amplifier
•
Complementary pair with 2SC5120
Outline
2SA1958
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
Ratings
–150
–150
–3
–0.2
–0.4
1.4
8*
1
Junction temperature
Storage temperature
Note:
1. T
C
= 25°C.
Tj
Tstg
150
–55 to +150
°C
°C
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–150
–150
—
—
50
—
400
—
Typ
—
—
—
—
—
—
500
5.5
Max
—
—
–10
–10
150
–1.0
—
7.0
Unit
V
V
µA
µA
—
V
MHz
pF
Test conditions
I
C
= –10 µA, I
E
= 0
I
C
= –1 mA, R
BE
=
∞
V
CB
= –100 V, I
E
= 0
V
EB
= –3 V, I
C
= 0
V
CE
= –10 V, I
C
= –10 mA
I
C
= –50 mA, I
B
= –5 mA
V
CE
= –20 V, I
C
= –50 mA
V
CB
= –30 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
2
2SA1958
3
2SA1958
4
2SA1958
5
