Ordering number : ENN6913A
2SA2040 / 2SC5707
2SA2040 / 2SC5707
Applications
•
PNP / NPN Epitaxial Planar Silicon Transistors
High Current Switching Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
Adoption of FBET and MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
( ) : 2SA2040
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--50)100
(--50)100
(--)50
(--)6
(--)8
(--)11
(--)2
1.0
15
150
--55 to +150
Unit
V
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(-
-)500mA
VCE=(--)10V, IC=(--)500mA
200
(290)330
Ratings
min
typ
max
(--)0.1
(--)0.1
560
MHz
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62405EA MS IM TB-00001403 / 30101 TS IM TA-3233 No.6913-1/5
2SA2040 / 2SC5707
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)10V, f=1MHz
IC=(--)3.5A, IB=(-
-)175mA
IC=(--)2A, IB=(--)40mA
IC=(--)2A, IB=(--)40mA
IC=(--)10µA, IE=0A
IC=(--)100µA, RBE=0Ω
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--50)100
(--50)100
(--)50
(--)6
(40)30
(225)420
25
Ratings
min
typ
(50)28
(--230)160 (--390)240
(-
-240)110 (--400)170
(--)0.83
(--)1.2
max
Unit
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7518-003
6.5
5.0
2.3
Package Dimensions
unit : mm
7003-003
1.5
0.5
4
4
7.0
1.5
6.5
5.0
2.3
0.5
5.5
5.5
7.0
0.8
1.6
7.5
1
0.5
2
0.8
1.2
3
0 to 0.2
1.2
0.6
0.6
2.5
0.85
0.7
0.85
0.5
1.2
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
100µF
+
470µF
VCC=25V
OUTPUT
RL
VBE= --5V
20IB1= --20IB2=IC=2.5A
For PNP, the polarity is reversed.
No.6913-2/5
2SA2040 / 2SC5707
--7
IC -- VCE
2SA2040
--90mA
--80mA
--70mA
--60mA
7
IC -- VCE
90mA
80mA
--6
6
Collector Current, IC -- A
Collector Current, IC -- A
--5
5
100
A
--50m
--40mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
--4
0
--1
A
0m
--30mA
4
--20mA
--3
3
--2
--10mA
2
--1
0
0
--0.4
--0.8
--1.2
1
IB=0mA
--1.6
--2.0
IT00206
mA
0
0
2SC5707
0.4
0.8
1.2
1.6
IB=0mA
2.0
IT00207
Collector-to-Emitter Voltage, VCE -- V
--8
--7
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
8
7
IC -- VBE
2SA2040
VCE= --2V
Collector Current, IC -- A
2SC5707
VCE=2V
Collector Current, IC -- A
--6
--5
--4
--3
6
5
4
3
2
1
0
--2
--1
0
0
--0.2
--0.4
--0.6
Ta=
75
°
25
°
C
C
--25
°
C
--0.8
--1.0
--1.2
--1.4
0
0.2
0.4
0.6
Ta=7
5
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
1.4
IT00209
Base-to-Emitter Voltage, VBE -- V
1000
7
5
IT00208
1000
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
2SA2040
VCE= --2V
DC Current Gain, hFE
7
5
3
2
Ta=75°C
25°C
--25°C
2SC5707
VCE=2V
DC Current Gain, hFE
3
2
Ta=75°C
25
°C
--25°C
100
7
5
3
2
100
7
5
3
2
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
--1000
7
5
3
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT00210
10
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
VCE(sat) -- IC
Collector Current, IC -- A
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT00211
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
°
C
Ta=7
°
C
--25
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SA2040
IC / IB=20
2SC5707
IC / IB=20
2
5
°
C
7
Ta=
C
--25
°
5
°
C
25
°
C
Collector Current, IC -- A
5 7 --10
IT00212
Collector Current, IC -- A
5 7 10
IT00214
No.6913-3/5
2SA2040 / 2SC5707
--10000
7
5
3
2
VCE(sat) -- IC
2SA2040
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
10
0.01
2
3
VCE(sat) -- IC
2SC5707
IC / IB=50
--1000
7
5
3
2
--100
7
5
3
2
--10
--0.01
2
3
7
Ta=
--25
°
C
5 7 --0.1
2
5
°
C
25°C
5
°
C
Ta=7
C
--25
°
5 7 0.1
2
3
5 7 1.0
25°C
3
5 7 --1.0
2
3
Collector Current, IC -- A
--10000
5 7 --10
IT00213
2
3
VBE(sat) -- IC
Collector Current, IC -- A
10000
5 7 10
IT00215
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
7
5
3
2
2SA2040
IC / IB=50
7
5
3
2
2SC5707
IC / IB=50
--1000
7
5
3
2
Ta= --25°C
75°C
25°C
1000
7
5
3
2
Ta= --25°C
75°C
25°C
--100
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
5
3
5 7 --10
IT00216
100
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Cob -- VCB
Collector Current, IC -- A
5
5 7 10
IT00217
Cob -- VCB
2SC5707
f=1MHz
2SA2040
f=1MHz
Output Capacitance, Cob -- pF
3
2
100
7
5
3
2
10
7
5
3
2
Output Capacitance, Cob -- pF
2
100
7
5
3
2
10
7
5
3
2
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5
Collector-to-Base Voltage, VCB -- V
1000
7
IT00218
1000
f T -- IC
Collector-to-Base Voltage, VCB -- V
IT00219
f T -- IC
Gain-Bandwidth Product, f T -- MHz
5
3
2
Gain-Bandwidth Product, f T -- MHz
2SA2040
VCE= --10V
7
5
3
2
2SC5707
VCE=10V
100
7
5
3
2
100
7
5
3
2
10
5 7--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
10
Collector Current, IC -- A
5 7 --10
IT00220
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10
IT00221
No.6913-4/5
2SA2040 / 2SC5707
2
10
7
5
ASO
ICP=11A
100ms 10ms
50
1m
0
µ
s
IC=8A
DC
s
Op
era
DC
tio
Op
n(
era
Tc
tio
=2
n(
5
°
Ta
C)
=2
5
°
C)
1.2
PC -- Ta
2SA2040 / 2SC5707
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Collector Dissipation, PC -- W
10
s
0
µ
1.0
Collector Current, IC -- A
0.8
0.6
No
he
at
sin
k
0.4
0.01
0.1
2SA2040 / 2SC5707
Tc=25°C
Single pulse
For PNP, the minus sign(--)is omitted
2
3
5 7 1.0
2
3
5 7 10
2
3
0.2
0
5 7 100
IT02971
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
18
16
15
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta --
°C
IT02972
PC -- Tc
2SA2040 / 2SC5707
Collector Dissipation, PC -- W
140
160
Case Temperature, Tc --
°C
IT02973
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS No.6913-5/5
