Ordering number : ENN7990
2SA2126
2SA2126
Applications
•
PNP Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
DC / DC converter, relay drivers, lamp drivers, motor drivers.
Features
•
•
•
•
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
-
-50
-
-50
-
-50
--6
--3
--6
--600
0.8
15
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
VCB=-
-40V, IE=0
VEB=-
-4V, IC=0
VCE=-
-2V, IC=--100mA
VCE=-
-10V, IC=--500mA
VCB=-
-10V, f=1MHz
200
390
24
Conditions
Ratings
min
typ
max
--1
--1
560
MHz
pF
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21505EA TS IM TB-00000214 No.7990-1/4
2SA2126
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=--1A, IB=--50mA
IC=--2A, IB=--100mA
IC=--2A, IB=--100mA
IC=--10µA, IE=0
IC=--100µA, RBE=0
IC=--1mA, RBE=∞
IE=--10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--50
--50
--50
--6
30
230
18
Ratings
min
typ
--135
--260
--0.96
max
--270
--520
--1.2
Unit
mV
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
2045B
6.5
5.0
4
Package Dimensions
unit : mm
2044B
2.3
1.5
0.5
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.8
1.6
0.6
1
2
3
0.5
1
0.6
7.5
0.8
2
3
2.5
1.2
0.85
0.5
1.2
0.85
0.7
5.5
7.0
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
1.2
0
‘
0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
2.3
2.3
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
RB
+
100µF
VBE=5V
+
470µF
VCC= --25V
IB1
IB2
OUTPUT
RL
--10IB1=10IB2= IC= --1A
--5.0
--4.5
IC -- VCE
--250
mA 0mA
--20
mA
--150
mA
--100
--50mA
--3.0
IC -- VBE
VCE= --2V
Collector Current, IC -- A
--3.5
--3.0
--2.5
--2.0
--1.5
Collector Current, IC -- A
--4.0
--2.5
--2.0
5
°
C
Ta=
7
--1.0
--0.5
0
0
--0.2
--0.4
--0.6
--20mA
--10mA
--1.5
C
--0.8
25
°
--5mA
--1.0
--0.5
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
IB=0
--1.8
--2.0
--25
°
--1.0
C
--1.2
IT07643
Collector-to-Emitter Voltage, VCE -- V
IT07642
Base-to-Emitter Voltage, VBE -- V
No.7990-2/4
2SA2126
1000
7
5
hFE -- IC
VCE= --2V
Gain-Bandwidth Product, fT -- MHz
1000
7
5
fT -- IC
VCE= --10V
DC Current Gain, hFE
Ta=75
°C
25
°
C
--25
°C
3
2
3
2
100
7
5
3
--0.01
100
7
5
3
--0.01
2
3
5
7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
100
5 7 --10
IT07644
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Cob -- VCB
Collector Current, IC -- A
--1.0
7
5 7 --10
IT07645
VCE(sat) -- IC
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
IC / IB=20
Output Capacitance, Cob -- pF
7
5
3
2
5
3
--0.1
7
5
3
2
2
=7
Ta
5
°
C
C
5
°
-2
-
°
C
25
10
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
IT07646
--0.01
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Collector-to-Base Voltage, VCB -- V
3
2
VCE(sat) -- IC
Collector Current, IC -- A
3
5 7 --10
IT07647
VBE(sat) -- IC
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
--1.0
7
5
3
2
--0.1
7
5
3
2
--1.0
C
Ta= --25
°
5
°
C
a=7
T
C
25
°
°
C
-25
-
7
75
°
C
5
25
°
C
--0.01
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7
3
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
--10
7
5
IT07648
ASO
Collector Current, IC -- A
0.9
0.8
5 7 --10
IT07649
PC -- Ta
ICP= --6A
IC= --3A
<10µs
Collector Current, IC -- A
10
DC
Collector Dissipation, PC -- W
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
50
0
µ
s
0
10
µ
s
0m
s
10
1m
m
s
s
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
DC
op
No
era
tio
he
a
ope
ion
rat
n(
Ta
=2
ts
in
k
(Tc
5
°
C)
=2
5
°
C
)
--0.01
--0.1
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
IT07650
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°C
IT07651
No.7990-3/4
2SA2126
16
15
14
PC -- Tc
Collector Dissipation, PC -- W
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT07652
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
PS No.7990-4/4
RF/无线
