SMD Type
PNP Transistors
2SB1114
Transistors
■
Features
●
High Dc current gain h
FE
=135 to 600
●
Low VCE(sat) V
CE(sat)
=-0.3V at 1.5A
●
Complementary to 2SD1614
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-20
-20
-6
-2
-3
2
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
C
ob
f
T
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -16V , I
E
=0
V
EB
= -6V , I
C
=0
I
C
=-1.5 A, I
B
=-50mA
I
C
=-1.5 A, I
B
=-50mA
V
CE
= -6V, I
C
= -100 mA
V
CE
= -2V, I
C
= -100 mA
V
CE
= -2V, I
C
= -2 A
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= -10V, I
E
= 50mA
135
40
60
180
pF
MHz
-0.3
-1.05
350
Min
-20
-20
-6
-0.1
-0.1
-0.5
-1.2
600
V
uA
V
Typ
Max
Unit
-0.65 -0.68 -0.75
■
Classification of h
fe(1)
Type
Range
Marking
2SB1114-M
135-270
ZM
2SB1114-L
200-400
ZL
2SB1114-K
300-600
ZK
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SB1114
■
Typical Characterisitics
Transistors
2
www.kexin.com.cn
SMD Type
PNP Transistors
2SB1114
■
Typical Characterisitics
Transistors
www.kexin.com.cn
3
