Medium Power Transistor (32V,1A)
2SB1132 / 2SA1515S / 2SB1237
Features
1) Low V
CE(sat).
V
CE(sat)
=
0.2V(Typ.)
(I
C
/ I
B
=
500mA
/
50mA)
2) Compliments 2SD1664 /
2SD1858
Structure
Epitaxial planar type
PNP silicon transistor
Dimensions
(Unit : mm)
2SB1132
0.5
+
0.1
−
4.5
+0.2
−0.1
1.6
+
0.1
−
1.5
+0.2
−0.1
2SA1515S
4
+
0.2
−
2
+
0.2
−
3
+
0.2
−
4.0
+
0.3
−
2.5
+0.2
−0.1
(15Min.)
(1)
(2)
(3)
0.4 0.1
1.5
+
0.1
−
1.0
+
0.2
−
0.4
+0.1
−0.05
0.45
+0.15
−0.05
0.4
+
0.1
−
1.5
+
0.1
−
0.5
+
0.1
−
3.0
+
0.2
−
3Min.
5
2.5
+0.4
−0.1
0.5
0.45
+0.15
−0.05
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
Abbreviated symbol: BA
∗
2.5
+
0.2
−
(1) Emitter
(2) Collector
(3) Base
2SB1237
6.8
+
0.2
−
0.65Max.
1.0
0.5
+
0.1
−
(1)
(2)
(3)
2.54 2.54
1.05
14.5
+
0.5
−
4.4
+
0.2
−
0.9
0.45
+
0.1
−
ROHM :
ATV
(1) Emitter
(2) Collector
(3) Base
∗
Denotes h
FE
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2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.C
2SB1132 / 2SA1515S / 2SB1237
Absolute
maximum ratings
(Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−40
−32
−5
−1
−2
0.5
2
P
C
0.3
1
Tj
Tstg
+
+
Data Sheet
Unit
V
V
V
A(DC)
A(Pulse)
∗
1
∗
2
∗
3
2SB1132
Collector power
dissipation
2SA1515S
2SB1237
Junction temperature
Storage temperature
W
150
−55
to
+150
C
C
∗
1
∗
2
∗
3
Single pulse, Pw=100ms
When mounted on a 40 40 0.7 mm ceramic board.
Printed circuit board, 1.7 mm thick, collector copper plating 100mm
2
or larger.
Electrical
characteristics
(Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1132, 2SB1237
2SA1515S
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−40
−32
−5
−
−
−
120
120
−
−
Typ.
−
−
−
−
−
−0.2
−
−
150
20
Max.
−
−
−
−0.5
−0.5
−0.5
390
390
−
30
Unit
V
V
V
μA
μA
V
−
−
MHz
pF
I
C
=
−
50μA
I
C
=
−
1mA
I
E
=
−
50μA
V
CB
=
−
20V
V
EB
=
−
4V
I
C
/I
B
=
−
500mA/
−
50mA
V
CE
=
−
3V, I
C
=
−
0.1A
V
CE
=
−
5V, I
E
=50mA,
f=30MHz
V
CB
=
−
10V, I
E
=0A,
f=1MHz
Conditions
∗
∗
Transition frequency
Output capacitance
∗
Measured using pulse current.
Packaging
specifications and h
FE
Package
Code
Type
2SB1132
2SA1515S
2SB1237
h
FE
QR
QR
QR
−
−
−
Basic ordering unit (pieces)
T100
1000
Taping
TP
5000
−
TU2
2500
−
−
h
FE
values are classified as follows :
Item
h
FE
Q
120 to 270
R
180 to 390
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2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.12 - Rev.C
2SB1132 / 2SA1515S / 2SB1237
Electrical
characteristics curves
-500
V
CE
=
−
6V
−500
COLLECTOR CURRENT : I
C
(mA)
Data Sheet
COLLECTOR CURRENT : I
C
(mA)
-200
-100
-50
-20
-10
-5
-2
-1
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
Ta
=
100 C
25 C
−
55 C
DC CURRENT GAIN : h
FE
−3.0
−3.5
−4.0
−400 −4.5
−5.0
−300
−2.5
Ta=25 C
−2.0
−1.5
1000
Ta=25 C
500
V
CE
= −3V
−1V
200
−200
−1.0
−100
−0.5
100
0
0
−0.4
−0.8
−1.2
I
B
=0mA
−1.6
−2.0
50
−1
−2
−5 −10 −20
−50 −100 −200 −500 −1000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded emitter
propagation characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
(Ι)
V
CE
= −
3V
1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat )
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
−1
−0.5
Ta=25 C
I
C
/I
B
=10
−1.0
Ta=25 C
DC CURRENT GAIN : h
FE
−0.8
500
Ta=100 C
200
25 C
−55
C
−0.2
−0.1
−0.05
−0.6
l
C
= −500mA
−0.4
100
50
−1
−2
−0.02
−0.01
−1 −2
−0.2
l
C
= −300mA
−2
−5
−10
−20
−50 −100
−5 −10 −20
−50 −100 −200 −500−1000
−5 −10 −20
−50 −100 −200 −500 −1000 −2000
0
−1
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
BASE CURRENT : I
B
(mA)
Fig.4 DC current gain vs.
collector current
(ΙΙ)
Fig.5 Collector-emitter saturation
voltage vs. collector current
Fig.6 Collector-emitter saturation
voltage vs. base current
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25 C
V
CE
= −
5V
200
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
100
COLLECTOR CURRENT : I
C
(A)
Ta=25 C
f=1MHz
I
E
=0A
50
−5
−2
=
1
Pw
s
0m
=
1
∗
P
w
ms
00
−1
−0.5
−0.2
−0.1
−0.05
−0.02
Ta=25 C
∗Single
pulse
−0.01
0
−0.2 −0.5 −1
D
C
∗
100
50
20
20
−1
−2
−5
−10
−20
−50 −100
10
−
0.5
−
1
−
2
−
5
−
10
−
20
−2
−5 −10 −20
−50
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Gain bandwidth product
vs. emitter current
Fig.8 Collector output capacitance
vs.collector-base voltage
Fig.9 Safe operation area
(2SB1132)
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2009 ROHM Co., Ltd. All rights reserved.
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2009.12 - Rev.C
2SB1132 / 2SA1515S / 2SB1237
−5
COLLECTOR CURRENT : I
C
(A)
Data Sheet
TRANSIENT THERMAL RESISTANCE : R
th
( C/W)
1000
Ta=25 C
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−0.1 −0.2
I
C Max
.
∗
Ta=25 C
∗
Single pulse
TRANSIENT THERMAL
RESISTANCE : R
th
( C/W)
200
100
50
Ta=25 C
100
P
W
=10ms
∗
P
W
=100ms
∗
DC
10
20
10
5
1
0.1
0.001
0.01
0.1
1
TIME : t
(s)
10
100
1000
−0.5 −1
−2
−5 −10 −20
−50
2
0.01
0.1
1
10
100
1000
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
TIME : t
(s)
Fig.10 Transient thermal resistance
(2SB1132)
Fig.11 Safe operation area
(2SB1237)
Fig.12 Transient thermal resistance
(2SB1237)
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2009 ROHM Co., Ltd. All rights reserved.
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2009.12 - Rev.C
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1102A
