Ordering number:ENN2091B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1134/2SD1667
50V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, and other general
high-current switching applications.
Package Dimensions
unit:mm
2041A
[2SB1134/2SD1667]
10.0
3.2
4.5
2.8
Features
· Low-saturation collector-to-emitter voltage :
V
CE(sat)
=–0.4V max/I
C
=(–)3A, I
B
=(–)0.3A.
· Micaless package facilitating mounting.
3.5
7.2
16.0
18.1
5.6
14.0
1.6
1.2
0.75
1 2
3
2.55
2.4
0.7
2.55
( ) : 2SB1134
2.55
2.55
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on ceramic board (250mm
2
×0.8mm)
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Conditions
2.4
Ratings
(–)60
(–)50
(–)6
(–)5
(–)9
2
25
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)3A
VCE=(–)5V, IC=(–)1A
70*
30
30
MHz
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB1134/2SD1667 are classified by 1A h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2003TN (KOTO)/92098HA (KT)/10996TS (KOTO) 8-8812/4107AT, TS No.2091–1/4
2SB1134/2SD1667
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Rise Time
Storage Time
Fall Time
Symbol
Cob
Conditions
VCB=(–)10V, f=1MHz
Ratings
min
typ
100
(160)
(–)0.4
(–)60
(–)50
(–)6
0.1
(0.7)
1.4
0.2
max
Unit
pF
pF
V
V
V
V
µs
µs
µs
µs
VCE(sat) IC=(–)3A, IB=(–)0.3A
V(BR)CBO IC=(–)1mA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)1mA, IC=0
See specified Test Circuti.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
IB1
PW=20µs
tr, tf
≤15ns
INPUT
100Ω
50Ω
1
IB2
+
+
OUTPUT
10Ω
470µF
100µF
--5V
10IB1= --10IB2= IC=2A
(For PNP, the polarity is reversed.)
20V
--10
IC -- VCE
5
--4
0m
A
2SB1134
A
0m
A
--300mA
-40
-350m
-
-
--250mA
--200mA
10
IC -- VCE
500m
450
400
A
mA
mA
A
0m
35
00mA
50mA
A
3
2
200m
A
150m
2SD1667
Collector Current, IC – A
--150mA
Collector Current, IC – A
--8
mA
8
--5
00
100mA
--6
--100mA
--50mA
6
50mA
4
--4
--2
2
0
0
--0.4
--0.8
--1.2
--1.6
IB=0
--2.0
--2.4
ITR08250
0
0
0.4
0.8
1.2
1.6
IB=0
2.0
2.4
ITR08251
Collector-to-Emitter Voltage, VCE – V
--10
Collector-to-Emitter Voltage, VCE – V
10
IC -- VBE
2SB1134
VCE=--2V
IC -- VBE
2SD1667
VCE=2V
Collector Current, IC – A
Collector Current, IC – A
--8
8
--6
6
°
C
25
°
C
0.8
Ta=8
0
°
C
25
°
C
--4
4
--20
°
C
--2
2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
0.2
0.4
0.6
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V
ITR08252
Base-to-Emitter Voltage, VBE – V
Ta=8
0
--20
°
C
ITR08253
No.2091–2/4
2SB1134/2SD1667
1000
7
5
3
2
hFE -- IC
2SB1134
VCE=--2V
Ta=80°C
1000
7
5
hFE -- IC
2SD1667
VCE=2V
Ta=80°C
DC Current Gain, hFE
25°C
--20
°C
DC Current Gain, hFE
3
2
25°C
--20°C
100
7
5
3
2
10
--0.01
100
7
5
3
2
10
0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC – A
2
--1.0
2
--10
ITR08254
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC – A
2
2
10
ITR08255
VCE(sat) -- IC
2SB1134
IC / IB=10
VCE(sat) -- IC
2SD1667
IC / IB=10
1.0
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
5
3
2
--0.1
5
3
2
0.1
5
3
2
0.01
Ta
C
0
°
=8
C
0
°
5
3
2
°
C
25
--2
=8
Ta
0
°
C
C
0
°
--2
25
°
C
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC – A
3
2
2
--10
ITR08256
3
2
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC – A
2
10
ITR08257
VCE(sat) -- IC
2SB1134
IC / IB=20
VCE(sat) -- IC
2SD1667
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
--1.0
5
3
2
--0.1
5
3
2
1.0
5
3
2
0.1
5
3
2
0.01
Ta
0
=8
°
C
°
C
0
--2
Ta
0
°
=8
C
°
C
0
--2
C
25
°
25
°
C
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC – A
3
2
--10
ITR08258
3
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC – A
2
10
ITR08259
VBE(sat) -- IC
2SB1134
VBE(sat) -- IC
2SD1667
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
2
2
--1.0
1.0
=10
IC / I B
7
5
0
IC / I B=1
7
5
=20
IC / I B
0
IC / I B=2
3
3
2
2
3
5
--0.1
2
3
5
--1.0
2
3
5
2
Collector Current, IC – A
2
--10
ITR08260
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC – A
2
10
ITR08261
No.2091–3/4
2SB1134/2SD1667
2
--10
ASO
2SB1134
ICP=–9A
IC=–5A
2
10
ASO
2SD1667
ICP=9A
Collector Current, IC – A
Collector Current, IC – A
7
5
3
2
--1.0
7
5
3
2
--0.1
5
7
5
3
2
1.0
7
5
3
2
s
0m
10
IC=5A
0m
10
s
op
era
t
ion
1m
DC
D
C
s
1m
s
10m
10 m
s
op
er
at
io
s
n
1ms to 100ms : single pulse
7 --1.0
2
3
5
7
--10
2
3
5
0.1
7 --100
ITR08262
28
25
24
5
1ms to 100ms : single pulse
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE – V
2.4
Collector-to-Emitter Voltage, VCE – V
7 100
ITR08263
PC -- Ta
2SB1134 / 2SD1667
PC -- Tc
2SB1134 / 2SD1667
Collector Dissipation, P
C
– W
Collector Dissipation, P
C
– W
100
120
140
160
2.0
20
1.6
No
1.2
he
at
16
sin
k
12
0.8
8
0.4
4
0
0
0
20
40
60
80
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR08264
Case Temperature, Tc – ˚C
ITR08265
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.2091–4/4
模拟与混合信号
