2SB1188K
PNP Silicon Medium Power Transistors
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
1
2
3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Ratings
-40
-32
-5
-2
Unit
V
V
V
A
W
°C
0.5 (2.0*)
150, -55~150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min.
-40
-32
-5
-
-
82
-
-
Typ.
-
-
-
-
-
-500
-
150
50
Max.
-
-
-
-1
-1
-800
390
-
-
Unit
V
V
V
μA
μA
mV
-
MHz
pF
Test Conditions
IC=-50µA , IE=0
I
C
= -1mA, I
B
=0
I
E
= -50µA, I
C
=0
V
CB
= -20V, I
E
=0
V
EB
= -4V, I
C
=0
I
C
= -2A, I
B
= -200mA
V
CE
= -3V, I
C
= -500mA
V
CE
= -5V, I
C
= -500mA, f=30MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
CE(sat)
h
FE
f
T
C
OB
-
*
Pulse Test: Pulse Width
≦
380
μs,
Duty Cycle≦2%
CLASSIFICATION OF hFE
Marking
Rank
Range
BCP
P
82-180
BCQ
Q
120-270
BCR
R
180-390
WEITRON
http://www.weitron.com.tw
1/3
16-Mar-2012
2SB1188K
CHARACTERISTIC CURVES
WEITRON
http://www.weitron.com.tw
2/3
16-Mar-2012
2SB1188K
SOT-89 Outline Dimensions
unit:mm
A
E
C
Dim
A
B
C
D
E
F
G
H
J
K
L
SOT-89
Min
Max
4.600
4.400
4.250
3.940
1.600
1.400
2.600
2.300
1.700
1.500
0.890
1.200
0.580
0.400
1.500TYP
3.000TYP
0.520
0.320
0.440
0.350
B
F
G
H
J
D
K
L
WEITRON
http://www.weitron.com.tw
3/3
16-Mar-2012
