UTC 2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SB1202 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
1
FEATURES
*Adoption of FBET, MBIT processes
*Large current capacity and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
TO-126C
1: EMITTER
2: COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Tc=25°C
Collector Current(DC)
Collector Current(PULSE)
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
Icp
T
j
T
STG
VALUE
-60
-50
-6
1
15
-3
-6
150
-55 ~ +150
UNIT
V
V
V
W
W
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (note)
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-on Time
Storage Time
Fall Time
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
f
T
Cob
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
ton
tstg
t
f
TEST CONDITIONS
V
CB
=-40V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-2V, Ic=-100mA
V
CE
=-2V, Ic=-3A
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, f=1MHz
I
C
=-2A, I
B
=-100mA
I
C
=-2A, I
B
=-100mA
I
C
=-10µA, I
E
=0
I
C
=-1mA, R
BE
=∞
I
E
=-10µA, I
C
=0
See test circuit
See test circuit
See test circuit
MIN
TYP
MAX
-1
-1
560
UNIT
µA
µA
100
35
150
39
-0.35
-0.94
-60
-50
-6
70
450
35
-0.7
-1.2
MHz
pF
V
V
V
V
V
ns
ns
ns
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R217-005,A
UTC 2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CLASSIFICATION OF h
FE1
RANK
RANGE
R
100-200
S
140-280
T
200-400
U
280-560
TEST CIRCUIT FOR NPN
(PNP: the polarity is reversed; Unit: resistance:
Ω,
capacitance: F)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R217-005,A
UTC 2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R217-005,A
UTC 2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
4
QW-R217-005,A
