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2SB1216

SMALL SIGNAL TRANSISTOR

器件类别:分立半导体    晶体管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Reach Compliance Code
compli
最大集电极电流 (IC)
4 A
配置
Single
最小直流电流增益 (hFE)
70
最高工作温度
150 °C
极性/信道类型
PNP
最大功率耗散 (Abs)
20 W
表面贴装
YES
标称过渡频率 (fT)
130 MHz
Base Number Matches
1
文档预览
Ordering number : EN2540B
2SB1216/2SD1816
Bipolar Transistor
(–)100V, (–)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
Applications
http://onsemi.com
Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications
Features
Low collector-to-emitter saturation voltage
Small and slim package facilitating compactness of sets
High fT
Good linearity of hFE
Fast switching time
Specifications
( ): 2SB1216
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
(-
-)120
(-
-)100
(-
-)6
(-
-)4
(-
-)8
Unit
V
V
V
A
A
Continued on next page.
Package Dimensions
unit : mm (typ)
7518-003
6.5
5.0
4
2.3
1.5
0.5
Package Dimensions
unit : mm (typ)
7003-003
2SB1216S-E
2SB1216S-H
2SB1216T-E
2SB1216T-H
2SD1816S-E
2SD1816S-H
2SD1816T-E
2SD1816T-H
6.5
5.0
4
2.3
1.5
0.5
0.8
1.6
7.5
0.6
1
2
3
0.5
0.6
1
2
0.8
1.2
3
2.5
0.85
0.7
0.85
1.2
0.5
2SB1216S-TL-E
2SB1216S-TL-H
2SB1216T-TL-E
2SB1216T-TL-H
2SD1816S-TL-E
2SD1816S-TL-H
2SD1816T-TL-E
2SD1816T-TL-H
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
7.0
5.5
5.5
7.0
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP
2.3
2.3
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Marking
(TP, TP-FA)
B1216
RANK
LOT No.
Packing Type (TP-FA) : TL
D1816
RANK
LOT No.
Electrical Connection
2,4
2,4
1
TL
1
2SB1216
3
2SD1816
3
Semiconductor Components Industries, LLC, 2013
September, 2013
60612 TKIM TA-4145, TA-4275, TA-3737/N2503TN (KT)/92098HA (KT)/8229MO/4087TA, TS No.2540-1/9
2SB1216 / 2SD1816
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
1
20
150
-
-55 to +150
Unit
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)0.5A
VCE=(--)5V, IC=(--)3A
VCE=(--)10V, IC=(--)0.5A
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)0.2A
VCE=(--)2A, IC=(--)0.2A
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(--)10μA, IC=0A
See specified Test Circuit.
(-
-)120
(-
-)100
(--)6
100
(800)900
50
70*
40
(130)180
(65)40
(--200)150
(-
-)0.9
(--500)400
(-
-)1.2
MHz
pF
mV
V
V
V
V
ns
ns
ns
Ratings
min
typ
max
(--)1
(--)1
400*
Unit
μA
μA
*
: The 2SB1216/2SD1816 are classified by 0.5A hFE as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
T
200 to 400
Switching Time Test Circuit
PW=20 s
D.C. 1%
INPUT
IB1
OUTPUT
IB2
VR
50
+
100 F
VBE= --5V
+
470 F
VCC=50V
RB
IC=10IB1= --10IB2=2A
For PNP, the polarity is reversed.
Ordering Information
Device
2SB1216S-E
2SB1216S-H
2SB1216T-E
2SB1216T-H
2SD1816S-E
2SD1816S-H
2SD1816T-E
2SD1816T-H
2SB1216S-TL-E
2SB1216S-TL-H
2SB1216T-TL-E
2SB1216T-TL-H
2SD1816S-TL-E
2SD1816S-TL-H
2SD1816T-TL-E
2SD1816T-TL-H
Package
TP
TP
TP
TP
TP
TP
TP
TP
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
Shipping
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
memo
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
Pb Free
Pb Free and Halogen Free
No.2540-2/9
2SB1216 / 2SD1816
--5
IC -- VCE
2SB1216
From top
--100mA
--90mA
--80mA
--70mA
--60mA
--50mA
5
IC -- VCE
2SD1816
70mA
60mA
50mA
40mA
90mA
80mA
A
100m
Collector Current, IC -- A
Collector Current, IC -- A
--4
A
--40m
--30mA
--20mA
4
--3
3
A
30m
20mA
10mA
2
--2
--10mA
--1
5mA
1
--5mA
0
--2mA
IB=0
0
--1
--2
--3
--4
--5
ITR09250
2mA
0
IB=0
0
1
2
3
4
5
ITR09251
Collector-to-Emitter Voltage, VCE -- V
--2.0
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
2.0
IC -- VCE
2SB1216
8mA
Collector Current, IC -- A
1.6
2SD1816
Collector Current, IC -- A
--1.6
--1.2
A
--10m
--9mA
--8mA
--7mA
--6mA
--5mA
--4mA
--3mA
--2mA
7mA
6mA
1.2
5mA
4mA
0.8
--0.8
3mA
2mA
0.4
--0.4
--1mA
0
1mA
0
IB=0
0
--10
--20
--30
--40
--50
ITR09252
IB=0
0
10
20
30
40
50
Collector-to-Emitter Voltage, VCE -- V
--5
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
ITR09253
5
IC -- VBE
2SB1216
VCE= --5V
Collector Current, IC -- A
2SD1816
VCE=5V
Collector Current, IC -- A
--4
4
--3
3
--2
2
--1
Ta=7
5
°
C
25
°
C
--25
°
C
1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0
0.2
0.4
0.6
Ta=7
5
°
C
25
°
C
--25
°
C
0.8
1.0
1.2
ITR09255
Base-to-Emitter Voltage, VBE -- V
1000
7
5
3
hFE -- IC
ITR09254
1000
7
5
3
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
2SB1216
VCE= --5V
Ta=75
°
C
2SD1816
VCE=5V
Ta=75
°
C
25°C
--25°C
25
°
C
DC Current Gain, hFE
DC Current Gain, hFE
2
3
5
2
3
5
--10
ITR09256
2
2
100
7
5
3
2
10
7
5
--25
°
C
100
7
5
3
2
10
7
5
5
--0.01
2
3
5
--0.1
--1.0
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
Collector Current, IC -- A
Collector Current, IC -- A
5
10
ITR09257
No.2540-3/9
2SB1216 / 2SD1816
5
f T -- IC
2SB1216 / 2SD1816
VCE=10V
3
2
Cob -- VCB
2SB1216 / 2SD1816
f=1MHz
Gain-Bandwidth Product, f T -- MHz
3
2
2SD1816
2SB1216
Output Capacitance, Cob -- pF
100
7
5
3
2
100
7
5
3
2
2SB
2SD
121
6
6
181
10
7
10
For PNP, the minus sign is omitted.
2
3
5
7
0.1
2
3
5
7 1.0
2
3
5
5
For PNP, the minus sign is omitted.
5
7 1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- A
5
ITR09258
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
7 100
2
ITR09259
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
2SB1216
IC / IB=10
3
2
1000
7
5
3
2
100
7
5
3
2
2SD1816
IC / IB=10
--1000
5
3
2
--100
5
3
2
--10
5
2
3
5
25
°
C
Ta=75
°
C
°
C
--25
25
°
C
Ta=75°C
--25
°
C
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
--0.01
--0.1
2
3
5
--1.0
2
3
Collector Current, IC -- A
--10
7
VBE(sat) -- IC
--10
ITR09260
10
7
5
10
Collector Current, IC -- A
VBE(sat) -- IC
10
ITR09261
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB1216
IC / IB=10
2SD1816
IC / IB=10
5
3
2
--1.0
7
5
3
2
5
Ta= --25
°
C
75
°
C
25
°
C
1.0
7
5
3
25
°
C
Ta= --25
°
C
75
°
C
--0.01 2
3
5
--0.1
2
3
5
--1.0
2
3
Collector Current, IC -- A
10
5
3
2
--10
ITR09262
25
5
2
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
ASO
Collector Current, IC -- A
10
ITR09263
5
PC -- Ta
ICP I
C
Collector Dissipation, PC -- W
20
s
1m
Collector Current, IC -- A
10
DC
1.0
5
3
2
0.1
5
3
2
0.01
5
2
DC
ms
op
era
t
op
era
ion
15
Id
100
ms
ea
(T
a=
lh
tio
n(
=
Tc
)
°
C
25
ea
25
°
C
)
td
iss
10
ip
ati
on
2SB1216 / 2SD1816
Tc=25
°
C
Single pulse
For PNP, the minus sign is omitted.
3
5
1.0
2
3
5
10
2
3
5
5
1
0
2
100
ITR09264
No heat sink
0
20
40
60
80
100
120
140 150 160
ITR09265
Collector-to-Emitter Voltage, VCE -- V
Ambient Temperature, Ta --
°
C
No.2540-4/9
2SB1216 / 2SD1816
Taping Specification
2SB1216S-TL-E, 2SB1216S-TL-H, 2SB1216T-TL-E2SB1216T-TL-H, 2SD1816S-TL-E, 2SD1816S-TL-H,
2SD1816T-TL-E, 2SD1816T-TL-H
No.2540-5/9
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参数对比
与2SB1216相近的元器件有:2SD1816。描述及对比如下:
型号 2SB1216 2SD1816
描述 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR
Reach Compliance Code compli compli
最大集电极电流 (IC) 4 A 4 A
配置 Single Single
最小直流电流增益 (hFE) 70 70
最高工作温度 150 °C 150 °C
极性/信道类型 PNP NPN
最大功率耗散 (Abs) 20 W 20 W
表面贴装 YES YES
标称过渡频率 (fT) 130 MHz 180 MHz
Base Number Matches 1 1
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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