2SB1409(L)/(S)
Silicon PNP Epitaxial
ADE-208-877 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)
Outline
DPAK
4
4
1
2
3
12
S Type
3
1. Base
2. Collector
3. Emitter
4. Collector
L Type
2SB1409(L)/(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
Tstg
Ratings
–180
–160
–5
–1.5
–3
18
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–180
–160
–5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
—
—
240
25
Max
—
—
—
–10
200
—
–1
–1.5
—
—
V
V
MHz
pF
Unit
V
V
V
µA
Test conditions
I
C
= –1 mA, I
E
= 0
I
C
= –10 mA, R
BE
=
∞
I
E
= –1 mA, I
C
= 0
V
CB
= –160 V, I
E
= 0
V
CE
= –5 V, I
C
= –150 mA*
2
V
CE
= –5 V, I
C
= –500 mA*
2
I
C
= –500 mA, I
B
= –50 mA
V
CE
= –5 V, I
C
= –150 mA
V
CE
= –5 V, I
C
= –150 mA
V
CB
= –10 A, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
V
CE(sat)
V
BE
f
T
Cob
Notes: 1. The 2SB1409(L)/(S) is grouped by h
FE1
as follows.
B
60 to 120
C
100 to 200
2. Pulse test.
2
2SB1409(L)/(S)
Maximum Collector Dissipation Curve
30
Collector power dissipation Pc (W)
–10
–3
–1.0
–0.3
–0.1
PW =
i
C (peak)
I
C (max)
DC
Op
Area of Safe Operation
10 ms
20
Collector Current I
C
(A)
er
on
a ti
s
1m
10
0
50
100
Case Temperature T
C
(°C)
150
–0.03 Ta = 25°C
1 Shot Pulse
–0.01
–3
–10
–30
–100
–300
Collector to emitter Voltage V
CE
(V)
°
C
25
)
Typical Output Characteristics
–1.0
1,000
P
C
= 18 W
DC current transfer ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
(T
C
=
Collector Current I
C
(A)
–0.8
–0.6
–5
5
–4.
–4
–3.5
–3
–2.5
–2
–1.5
–1 mA
300
100
–0.4
–0.2
I
B
= 0
0
T
C
= 25°C
30
V
CE
= –5 V
Ta = 25°C
–0.03
–0.1
–0.3
Collector current I
C
(A)
–1.0
–10
–20
–30
–40
–50
Collector to emitter Voltage V
CE
(V)
10
–0.01
3
2SB1409(L)/(S)
Saturation Voltage vs. Collector Current
Collector to emitter saturation voltage
V
CE (sat)
(V)
–10
Base to emitter saturation voltage
V
BE (sat)
(V)
–10
Saturation Voltage vs. Collector Current
–3
–1.0
–1.0
–0.1
–0.3
l
C
= 10 l
B
Ta = 25°C
–0.1
–0.3
–1.0
Collector current I
C
(A)
–3.0
–0.01
–0.001
l
C
= 10 l
B
Ta = 25°C
–0.01
–0.1
Collector current I
C
(A)
–1.0
–0.1
–0.03
Typical Transfer Characteristics
–2.0
Gain bandwidth product f
T
(MHz)
1,000
Gain Bandwidth Product vs.
Collector Current
Collector current I
C
(A)
–1.6
300
–1.2
100
–0.8
–0.4
30
V
CE
= –5 V
Ta = 25°C
–0.03
–0.1
–0.3
Collector current I
C
(A)
–1.0
V
CE
= –5 V
Ta = 25°C
0
–0.4
–0.8
–1.2
–1.6
–2.0
Base to emitter voltage V
BE
(V)
0
10
–0.01
4
2SB1409(L)/(S)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector output capacitance C
ob
(pF)
300
100
30
10
f = 1 MHz
I
E
= 0
Ta = 25°C
3
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
5
