SMD Type
Silicon PNP Epitaxial Planar Type
2SB1574
TO-252
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Possible to tsolder radiation fin directly to printed circuit boad.
Type with universal characteristics.
+0.2
9.70
-0.2
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
High collector-base voltage (Emitter open) V
CBO.
High collector-emitter voltage (Base open) V
CEO.
Large collector current I
C.
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-50
-50
-5
-2
-3
10
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff curent
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
Testconditons
I
C
= -10 ìA, I
E
= 0
I
C
= -1 mA, I
B
= 0
I
E
= -10 ìA, I
C
= 0
V
CB
= -10 V,I
E
= 0
V
CE
= -2 V, I
C
= -200 mA
V
CE
= -2 V, I
C
= -1A
V
CE(sat)
I
C
= -1 A, I
B
= -50 mA
V
BE(sat)
I
C
= -1 A, I
B
= -50 mA
f
T
C
ob
V
CE
= -10 V, I
C
= -50 mA , f = 200 MHz
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
120
60
-0.2
-0.85
80
45
60
-0.3
-1.2
V
V
MHz
pF
Min
-50
-50
-5
-0.1
340
Typ
Max
Unit
V
V
V
ìA
V
h
FE
Classification
Rank
h
FE
R
120 240
S
170 340
3
.8
0
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