Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
2SB1625
DESCRIPTION
・With
TO-3PML package
・Complement
to type 2SD2494
APPLICATIONS
・Audio
,regulator and general purpose
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-3PML) and symbol
Emitter
DESCRIPTION
・
Maximum absolute ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
固电
Collector-base voltage
导½
半
PARAMETER
CONDITIONS
Open emitter
Open base
Collector-emitter voltage
HA
INC
Emitter-base voltage
Collector current
Base current
Junction temperature
Storage temperature
ES
NG
Open collector
MIC
E
OR
UCT
ND
O
VALUE
-110
-110
-5
-6
-1
UNIT
V
V
V
A
A
W
℃
℃
Collector power dissipation
T
C
=25℃
60
150
-55~150
1
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-5 A;I
B
=-5m A
I
C
=-5 A;I
B
=-5m A
V
CB
=-110V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-5A ; V
CE
=-4V
I
C
=0.5A ; V
CE
=-12V
I
E
=0; V
CB
=-10V;f=1MHz
5000
100
110
MIN
-110
2SB1625
TYP.
MAX
UNIT
V
-2.5
-3.0
-100
-100
V
V
μA
μA
MHz
pF
Switching times
t
on
t
s
t
f
固电
Fall time
Turn-on time
Storage time
导½
半
h
FE
classifications
O
5000-12000
HA
INC
P
6500-20000
ES
NG
Y
15000-30000
I
C
=-5A;R
L
=6Ω
I
B1
=-I
B2
=-5mA
V
CC
=-30V
MIC
E
OR
UCT
ND
O
1.1
3.2
1.1
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
2SB1625
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
