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2SB1686P

Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：Allegro

厂商官网：http://www.allegromicro.com/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
TO-220AB
包装说明
FLANGE MOUNT, R-PSFM-T3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
BUILT IN RESISTOR
外壳连接
ISOLATED
最大集电极电流 (IC)
6 A
集电极-发射极最大电压
110 V
配置
DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)
6500
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
极性/信道类型
PNP
最大功率耗散 (Abs)
30 W
认证状态
Not Qualified
表面贴装
NO
端子面层
MATTE TIN
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
Base Number Matches
1
文档预览
(7 0
Ω
) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–110
–110
–5
–6
–1
30(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1686
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–110V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–5mA
I
C
=–5A, I
B
=–5mA
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–110
min
5000
min
∗
–2.5
max
–3.0
max
100
typ
110
typ
V
V
13.0min
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2642)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
16.9
±0.3
V
8.4
±0.2
µ
A
MHz
pF
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–5
I
B2
(mA)
5
t
on
(
µ
s)
1.1typ
t
stg
(
µ
s)
3.2typ
t
f
(
µ
s)
1.1typ
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
A
m
–1
V
C E
( sat ) – I
B
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a t i o n Vol t ag e V
C E (s at)
(V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
C E
=– 4 V )
–6
–6
A
–5m
–0
.5
m
A
–0
.4
mA
– 0 .3 m A
C ol l e c t o r C ur r en t I
C
( A)
–0 .2 mA
–4
Co l l e c t o r Cu r r e n t I
C
( A)
–2
– 5A
–4
p)
Tem
(Ca
125
˚C
–2
–1
–2
25˚C
0
0
–2
–4
–6
0
–0.1
–0.5 –1
–5 –10
–50 –100
0
0
–1
–30˚
C (C
ase
(Ca
se T
I
C
= – 3A
se
I
B
=–0 .1m A
emp
)
Tem
p)
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Part No.
b. Lot No.
–2
–3
C oll ec t or - Emi t t e r V ol tag e V
C E
(V )
Ba se Cu r r e nt I
B
( m A)
Ba s e - E m i tt o r V ol t ag e V
BE
( V )
(V
C E
=– 4 V )
50000
D C Cu r r en t Ga i n h
FE
D C Cu r r en t Ga i n h
FE
50000
( V
C E
= – 4 V)
1 25 ˚ C
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5.0
10000
5000
Typ
10000
5000
2 5˚ C
– 30 ˚ C
1.0
1000
500
1000
500
0.5
0.3
100
–0.01
–0.0 5 –0 . 1
– 0. 5
–1
–5 –6
100
–0.01
– 0 .0 5 – 0 .1
– 0. 5
–1
–5 –6
1
10
Time t(ms)
100
1 0 00
Co l le ct o r Cu rre nt I
C
(A)
C ol l ec t or C ur r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 12 V )
120
–20
–10
100
C ut- off F r e q u e n c y f
T
( M H
Z
)
Safe Operating Area
(Single Pulse)
30
Pc – Ta Derating
Typ
–5
Co lle cto r Cu r r e n t I
C
( A )
10
0m
10
s
m
s
Ma xi mu m Po w e r Di s s i p a t i o n P
C
( W )
W
ith
80
D
C
20
In
fin
ite
he
60
at
–1
– 0 .5
Without Heatsink
Natural Cooling
– 0 .1
si
nk
40
10
20
W i t h ou t H ea t s i nk
2
0
0
0.02
0.05
0.1
0.5
1
5 6
– 0 .0 5
–3
–5
–1 0
–5 0
–1 00
–2 0 0
0
25
50
75
10 0
125
150
Emi t t e r C u rren t I
E
(A)
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i e n t T em p e r at u r e T a ( ˚ C )
57
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参数对比
与2SB1686P相近的元器件有：2SB1686O、2SB1686Y、2SB1686。描述及对比如下：
型号 2SB1686P 2SB1686O 2SB1686Y 2SB1686
描述 Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN
是否Rohs认证 符合 符合 符合 符合
零件包装代码 TO-220AB TO-220AB TO-220AB TO-220AB
包装说明 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
针数 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT IN RESISTOR BUILT IN RESISTOR BUILT IN RESISTOR BUILT IN RESISTOR
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 6 A 6 A 6 A 6 A
集电极-发射极最大电压 110 V 110 V 110 V 110 V
配置 DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 6500 5000 15000 5000
JEDEC-95代码 TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609代码 e3 e3 e3 e3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1 1
最大功率耗散 (Abs) 30 W 30 W 30 W -
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