INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SB689
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -100V(Min)
·High
Power Dissipation
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for low frequency power amplifier and TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
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VALUE
UNIT
-100
V
-100
V
-4
V
-4
A
-5
A
1.8
W
40
℃
I
C
Collector Current-Continuous
I
CM
Collector Current-Peak
Total Power Dissipation
@ T
a
=25℃
P
C
Total Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-45~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB689
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA; R
BE
=
∞
-100
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -1mA; I
C
= 0
-4
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -1A; I
B
= -0.1A
B
-1.0
V
I
CEO
Collector Cutoff Current
V
CE
= -80V; R
BE
=
∞
-100
μA
I
EBO
Emitter Cutoff Current
V
EB
= -3.5V; I
C
= 0
-50
μA
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
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I
C
= -0.5A; V
CE
= -4V
50
I
C
= -50mA; V
CE
= -4V
25
250
350
isc Website：www.iscsemi.cn
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