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2SB698D

700mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, NP, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
是否Rohs认证
不符合
Objectid
1481157768
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-T3
针数
3
Reach Compliance Code
unknown
最大集电极电流 (IC)
0.7 A
集电极-发射极最大电压
20 V
配置
SINGLE
最小直流电流增益 (hFE)
60
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
PNP
最大功率耗散 (Abs)
0.6 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
BOTTOM
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
文档预览
Ordering number:ENN512F
PNP/NPN Epitaxial Planar Silicon Transistor
2SB698/2SD734
1W AF Output, Electronic Governor,
DC-DC Converter Applications
Features
Æ Audio 1W output.
Package Dimensions
unit:mm
2003B
[2SB698/2SD734]
5.0
4.0
4.0
0.45
0.5
0.6
2.0
5.0
0.45
0.44
14.0
1
2
3
( ) : 2SB698
Specifications
Absolute Maximum Ratings
at Ta = 25ßC
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.3
1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Ratings
(–)25
(–)20
(–)5
(–)0.7
(–)1.5
0.6
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25ßC
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Conditions
VCB=(–)20V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)50mA
VCE=(–)2V, IC=(–)500mA
VCE=(–)10V, IC=(–)50mA
Ratings
min
typ
max
(–)1.0
(–)1.0
60*
50
250
MHz
560*
Unit
µA
µA
* : The 2SB698/2SD734 are classified by 50mA h
FE
as follows :
Rank
hFE
D
60 to 120
E
100 to 200
F
160 to 320
G
280 to 560
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503TN (KT)/91098HA (KT)/4017KI/3075KI/1313KI/6162KI, TS No.512—1/4
2SB698/2SD734
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Brakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=(–)10V, f=1MHz
IC=(–)500mA, IB=(–)50mA
IC=(–)500mA, IB=(–)50mA
(–)25
(–)20
(–)5
Ratings
min
typ
(13)
8
(–0.2) (–0.45)
0.13
(–)0.9
0.3
max
Unit
pF
pF
V
V
V
V
V
V
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
IE=(–)10µA, IC=0
--800
--700
IC -- VCE
2SB698
0
--5
m
A
Collector Current, IC
mA
800
700
IC -- VCE
2SD734
50m
A
10
mA
Collector Current, IC
mA
--600
--500
--400
--300
--200
--100
0
0
--0.1
--0.2
mA
-30
-
mA
--10
--6mA
600
500
400
300
200
100
A
6m
4mA
2mA
--2mA
--1mA
1mA
IB=0
--0.3
--0.4
--0.5
ITR08332
0
0
0.1
0.2
0.3
IB=0
0.4
0.5
ITR08333
Collector-to-Emitter Voltage, VCE
V
--100
Collector-to-Emitter Voltage, VCE
V
120
IB -- VBE
2SB698
VCE= --5V
IB -- VBE
2SD734
VCE=5V
--80
100
Base Current, IB
µA
Base Current, IB
µA
0
--0.2
--0.4
--0.6
--0.8
--1.0
ITR08334
80
--60
60
--40
40
--20
20
0
0
0
0.2
0.4
0.6
0.8
1.0
ITR08335
Base-to-Emitter Voltage, VBE
V
1000
Base-to-Emitter Voltage, VBE
V
1000
f T -- IC
2SB698
VCE= --10V
f T -- IC
2SD734
VCE=10V
Gain-Bandwidth Product, fT
MHz
5
3
2
Gain-Bandwidth Product, fT
MHz
7
7
5
3
2
100
7
5
3
2
100
7
5
3
2
10
--1.0
2
3
5
7 --10
2
3
5
Collector Current, IC
mA
7 --100
2
ITR08336
10
1.0
2
3
5
7
10
2
3
5
7
Collector Current, IC
mA
2
100
ITR08337
No.512—2/4
2SB698/2SD734
1000
7
5
hFE -- IC
2SB698
VCE= --2V
1000
7
5
hFE -- IC
2SD734
VCE=2V
DC Current Gain, hFE
3
2
DC Current Gain, hFE
2
3
5
2
3
5
2
3
5
--1000 2
ITR08338
3
2
100
7
5
3
2
--1.0
100
7
5
3
1.0
--10
--100
2
3
5
10
2
3
5
100
2
3
5
Collector Current, IC
mA
100
7
Collector Current, IC
mA
5
1000 2
ITR08339
Cob -- VCB
2SB698
f=1MHz
Output Capacitance, Cob
pF
Cob -- VCB
2SD734
f=1MHz
Output Capacitance, Cob
pF
3
2
5
3
10
7
5
2
10
7
5
--1.0
3
2
1.0
2
3
5
7
--10
2
3
5
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
1000
ITR08340
5
Collector-to-Base Voltage, VCB -- V
100
ITR08341
7
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat)
mV
VCE(sat) -- IC
2SD734
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat)
mV
7
5
3
2
2SB698
IC / IB=10
3
2
100
7
5
3
2
100
7
5
3
2
10
7
10
--1.0
2
3
5
Collector Current, IC
mA
--10
2
3
5
--100
2
3
5
--1000
5
1.0
2
3
5
ITR08342
Collector Current, IC
mA
10
2
3
5
100
2
3
5
1000
ITR08343
700
PC -- Ta
2SB698 / 2SD734
600
Collector Dissipation, P
C
mW
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
— ßC
ITR08344
No.512—3/4
2SB698/2SD734
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
PS No.512—4/4
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