Ordering number : EN686J
2SB824 / 2SD1060
SANYO Semiconductors
DATA SHEET
2SB824 / 2SD1060
Applications
•
PNP / NPN Epitaxial Planar Silicon Transistors
50V / 5A Switching Applications
Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.
Features
•
Low collector-to-emitter saturation voltage : VCE(sat)= (-
-)0.4V max / IC= (-
-)3A, IB= (-
-)0.3A.
Specifications
( ) : 2SB824
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)60
(--)50
(--)6
(--)5
(--)9
1.75
30
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(-
-)4V, IC=0A
Ratings
min
typ
max
(--)0.1
(--)0.1
Unit
mA
mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’ s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’ s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82207FA TI IM TC-00000844 / 913003TN(KT)/91098HA(KT)/D251MH/4017KI No.686-1/5
2SB824 / 2SD1060
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
hFE1
hFE2
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCE=(-
-)2V, IC=(--)1A
VCE=(-
-)2V, IC=(--)3A
VCE=(-
-)5V, IC=(--)1A
VCB=(-
-)10V, f=1MHz
IC=(--)3A, IB=(--)0.3A
IC=(--)1mA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)1mA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--)60
(--)50
(--)6
0.1
(0.7)1.4
0.2
Ratings
min
70*
30
30
(160)100
(--)0.4
MHz
pF
V
V
V
V
μs
μs
μs
typ
max
280*
Unit
*
: The 2SB824 / 2SD1060 are classified by 1A hFE as follows :
Rank
Q
R
S
hFE
70 to 140
100 to 200
140 to 280
Package Dimensions
unit : mm (typ)
7507-001
Switching Time Test Circuit
IB1
OUTPUT
IB2
RB
1Ω
PW=20μs
tr, tf
≤15ns
10.2
5.1
4.5
3.6
1.3
INPUT
2.7
VR
100Ω
50Ω
6.3
RL
10Ω
+
1μF
VCC=20V
15.1
+
1μF
VBE= --5V
18.0
(5.6)
1.2
14.0
IC=10IB1= --10IB2=2A
For PNP, the polarity is reversed.
0.4
0.8
1 2 3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
2.55
2.55
--10
IC -- VCE
A
2SB824
mA
A
A
50
400m
350m
--300m
A
4
-
0m
--
--
-
--250mA
50
--
--200mA
--150mA
2.7
10
IC -- VCE
mA
45
0m
A
2SD1060
A
A
0m
50m
300mA
0mA
200mA
40
3
25
Collector Current, IC -- A
Collector Current, IC -- A
--8
8
500
150mA
100mA
--6
--100mA
--50mA
6
50mA
4
--4
--2
2
0
0
--0.4
--0.8
--1.2
--1.6
IB=0mA
--2.0
--2.4
ITR08435
0
0
0.4
0.8
1.2
1.6
IB=0mA
2.0
2.4
ITR08436
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.686-2/5
2SB824 / 2SD1060
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
IC -- VBE
2SB824
VCE= --2V
10
9
8
IC -- VBE
2SD1060
VCE=2V
Collector Current, IC -- A
Collector Current, IC -- A
7
6
5
Ta=
80
°
C
25
°
C
Ta=8
0
°
C
25
°
C
0
0.2
0.4
0.6
0.8
--20
°
C
4
3
2
1
0
--20
°
C
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE -- V
1000
7
5
ITR08437
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
ITR08438
hFE -- IC
2SB824
VCE= --2V
Ta=80
°
C
25
°
C
--20
°
C
2SD1060
VCE=2V
Ta=80
°
C
DC Current Gain, hFE
DC Current Gain, hFE
3
2
3
2
25
°
C
--20
°
C
100
7
5
3
2
100
7
5
3
2
10
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC -- A
--10
5
--10 2
ITR08439
10
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
VCE(sat) -- IC
Collector Current, IC -- A
10
2
10
ITR08440
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
--1.0
5
3
2
--0.1
5
3
2
2
3
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SB824
IC / IB=10
5
3
2
1.0
5
3
2
0.1
5
3
2
0.01
2
3
5
2SD1060
IC / IB=10
°
C
25
0
°
C
a=8
T
°
C
--20
°
C
25
8
Ta=
0
°
C
C
--20
°
0.1
2
3
5
1.0
2
3
5
2
10
ITR08442
--0.01
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC -- A
--10
5
2
--10
ITR08441
10
5
VCE(sat) -- IC
Collector Current, IC -- A
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
--1.0
5
3
2
--0.1
5
3
2
2
3
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SB824
IC / IB=20
2SD1060
IC / IB=20
3
2
1.0
5
3
2
0.1
5
3
2
0.01
2
3
5
°
C
25
25
°
C
80
°
C
Ta=
°
C
--20
0
°
C
Ta=8
--20
°
C
2
3
5
2
3
5
2
10
ITR08444
--0.01
--0.1
2
3
5
--1.0
2
3
5
Collector Current, IC -- A
2
--10
ITR08443
0.1
1.0
Collector Current, IC -- A
No.686-3/5
2SB824 / 2SD1060
--10
7
VBE(sat) -- IC
2SB824
10
7
VBE(sat) -- IC
2SD1060
Base-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
5
3
2
--1.0
7
5
3
2
2
3
5
--0.1
IC / IB=10
1.0
7
5
3
2
IC / IB=10
IC / IB=20
IC / IB=20
2
3
5
--1.0
2
3
5
Collector Current, IC -- A
2
--10
7
2
--10
ITR08445
2
10
7
2
3
5
0.1
2
3
5
1.0
2
3
5
ASO
Collector Current, IC -- A
2
10
ITR08446
ASO
2SB824
ICP= --9A
2SD1060
ICP=9A
10
Collector Current, IC -- A
Collector Current, IC -- A
5
3
2
--1.0
7
5
3
2
--0.1
5
IC= --5A
s
1m
s
ion
10m
s
rat
0m
pe
10
C o
D
5
3
2
1.0
7
5
3
2
IC=5A
s
0m
s
1m
ms
10
era
tio
n
DC
op
1ms to 100ms : Single pulse
7
--1.0
2
3
5
7
--10
2
3
5
0.1
7 --100
ITR08447
1ms to 100ms : Single pulse
5
7
1.0
2
3
5
7
10
2
3
5
7
100
Collector-to-Emitter Voltage, VCE -- V
2.0
1.8
1.75
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Collector-to-Emitter Voltage, VCE -- V
ITR08448
35
PC -- Ta
2SB824 / 2SD1060
PC -- Tc
2SB824 / 2SD1060
30
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
140
160
25
No
he
20
at
sin
k
15
10
5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT12873
Case Temperature, Tc --
°C
ITR08449
No.686-4/5
2SB824 / 2SD1060
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No.686-5/5
