UNISONIC TECHNOLOGIES CO., LTD
2SB857
SILICON PNP TRANSISTOR
DESCRIPTION
Low frequency power amplifier.
PNP SILICON TRANSISTOR
*Pb-free plating product number: 2SB857L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SB857-x-T6C-A-K
2SB857L-x-T6C-A-K
2SB857-x-TN3-F-R
2SB857L-x-TN3-F-R
2SB857-x-TN3-F-T
2SB857L-x-TN3-F-T
Package
TO-126C
TO-252
TO-252
Pin Assignment
1
2
3
E
C
B
B
C
E
B
C
E
Packing
Bulk
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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2SB857
ABSOLUTE MAXIMUM RATING
(Ta=25℃)
PARAMETER
Collector-Base Voltages
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (I
C
Peak)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(PEAK)
PNP SILICON TRANSISTOR
RATINGS
UNIT
-130
V
-100
V
-5
V
-4
A
-8
A
TO-126C
1.5
W
Total Power Dissipation
P
D
TO-252
20
W
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=-10μA, I
E
=0
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=-50mA, I
B
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-10μA, I
C
=0
Collector-Emitter Saturation Voltage
*V
CE(SAT)
I
C
=-2A, I
B
=-0.2A
Base-Emitter Saturation Voltage
*V
BE(ON)
V
CE
=-4V, I
C
=-1A
Collector Cut-off Current
I
CBO
V
CB
=-130V, I
C
=0
*h
FE1
V
CE
=-4V, I
C
=-0.1A
DC Current Gain
*h
FE2
V
CE
=-4V, I
C
=-1A
Transition Frequency
f
T
V
CE
=-4V, I
C
=-500mA, f=100MHz
Note *Pulse Test: Pulse Width
≦
380
μS,
Duty Cycle
≦
2%.
MIN
-130
-100
-5
TYP
MAX
UNIT
V
V
V
V
V
μA
-1
-1
-1
35
60
15
320
MHz
CLASSIFICATION OF h
FE2
CLASSIFICATION
RANGE
B
60 ~ 120
C
100 ~ 200
D
160 ~ 320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R217-206,B
2SB857
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
On Voltage (mV)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Capacitance (pF)
Saturation Voltage (mV)
h
FE
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2SB857
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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