Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB891F
DESCRIPTION
·With
TO-126 package
·Complement
to type 2SD1189F
·Low
collector saturation voltage
APPLICATIONS
·For
low frequency power amplifier
applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
5
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-40
-32
-5
-2
-3
1.2
W
UNIT
V
V
V
A
A
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-1mA ;I
B
=0
B
2SB891F
MIN
-32
-40
-5
TYP.
MAX
UNIT
V
V
V
I
C
=-50μA ;I
E
=0
I
E
=-50μA ;I
C
=0
I
C
=-2.0A; I
B
=-0.2A
V
CB
=-20V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.5A ; V
CE
=-3V
I
C
=-0.5A ; V
CE
=-5V;f=30MHz
I
E
=0; f=1MHz ; V
CB
=-10V
-0.5
-0.8
-1.0
-1.0
V
μA
μA
82
100
50
390
MHz
pF
h
FE-2
Classifications
P
82-180
Q
120-270
R
180-390
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB891F
Fig.2 Outline dimensions
3
