Power Transistors
2SB0940
(2SB940)
, 2SB0940A
(2SB940A)
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264, 2SD1264A
■
Features
Unit: mm
0.7
±0.1
10.0
±0.2
5.5
±0.2
4.2
±0.2
4.2
±0.2
2.7
±0.2
Solder Dip
(4.0)
•
High collector-emitter voltage (Base open) V
CEO
•
Large collector power dissipation P
C
•
Full-pack package which can be installed to the heat sink with one screw
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SB0940
(Base open)
2SB0940A
Emitter-base voltage (Collector open)
Collector current
V
EBO
I
C
I
CP
P
C
T
j
Peak collector current
Collector power
dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage (Emitter open)
Collector-emitter voltage
(Base open)
co
2SB0940
is
2SB0940A
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
M
Pl
e
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
f
T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
60 to 140
P
100 to 240
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00021BED
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16.7
±0.3
M
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7.5
±0.2
14.0
±0.5
φ
3.1
±0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
0.5
+0.2
–0.1
Rating
−200
−150
−180
−6
−2
−3
30
2
Unit
V
V
2.54
±0.3
5.08
±0.5
1 2 3
V
A
A
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
W
150
°C
−55
to
+150
°C
ue
Conditions
Min
Typ
Max
Unit
V
nt
in
I
C
= −50 µA,
I
E
=
0
I
C
= −5
mA, I
B
=
0
−200
−150
−6
V
−180
/D
V
EBO
V
BE
I
CBO
I
EBO
h
FE2
I
E
= −500 µA,
I
C
=
0
V
ce
V
CE
= −10
V, I
C
= −400
mA
V
CB
= −200
V, I
E
=
0
V
EB
= −4
V, I
C
=
0
−1
V
an
−50
240
−1
µA
V
en
−50
µA
nt
ai
h
FE1 *
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −10
V, I
C
= −400
mA
I
C
= −500
mA, I
B
= −50
mA
60
50
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
30
MHz
1
2SB0940, 2SB0940A
P
C
T
a
50
I
C
V
CE
−600
T
C
=25˚C
I
B
=–4.5mA
I
C
V
BE
−2.0
V
CE
=–10V
Collector power dissipation P
C
(W)
40
Collector current I
C
(A)
Collector current I
C
(A)
(1)T
C
=Ta
(2)With a 100×100×2mm
Al heat sink
(3)With a 50×50×2mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
−500
−400
–4.0mA
–3.5mA
–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
–0.5mA
−1.6
25˚C
30
−1.2
T
C
=100˚C
(1)
20
−300
−
0.8
–25˚C
−200
10
(3)
(4)
0
0
40
(2)
−100
−
0.4
80
120
160
0
0
−2
−4
−6
−8
−10
−12
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
4
−10
I
C
/I
B
=10
h
FE
I
C
V
CE
=–10V
f
T
I
C
10
4
Forward current transfer ratio h
FE
V
CE
=–10V
f=10MHz
T
C
=25˚C
10
3
T
C
=100˚C
25˚C
Transition frequency f
T
(MHz)
−1
−10
10
3
−1
T
C
=100˚C
25˚C
–25˚C
10
2
–25˚C
10
2
−
0.1
10
10
−
0.01
−
0.01
−
0.1
−1
1
−
0.01
−
0.1
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Safe operation area
−100
Non repetitive pulse
T
C
=25˚C
R
th
t
10
3
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
(1)
Thermal resistance R
th
(°C/W)
Collector current I
C
(A)
−10
I
CP
t=0.5ms
10
2
10
(2)
−1
I
C
t=5ms
t=1ms
1
DC
−
0.1
2SB0940A
2SB0940
10
−1
−
0.01
−1
−10
−100
−1
000
10
−2
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
SJD00021BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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–
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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