Power Transistors
2SB947, 2SB947A
Silicon PNP epitaxial planar type
For low-voltage switching
s
Features
0.7±0.1
Unit: mm
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB947
2SB947A
2SB947
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25˚C)
Ratings
–40
–50
–20
–40
–5
–15
–10
35
2
150
–55 to +150
Unit
16.7±0.3
14.0±0.5
V
emitter voltage 2SB947A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
Solder Dip
4.0
7.5±0.2
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB947
2SB947A
2SB947
2SB947A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
I
C
= –2A, I
B1
= –66mA, I
B2
= 66mA
Conditions
V
CB
= –40V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –2A
I
C
= –7A, I
B
= – 0.23A
I
C
= –7A, I
B
= – 0.23A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
150
200
0.1
0.5
0.1
–20
–40
45
90
260
– 0.6
–1.5
V
V
MHz
pF
µs
µs
µs
min
typ
max
–50
–50
–50
Unit
µA
µA
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
1
Power Transistors
P
C
— Ta
50
–12
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
–10
I
B
=–160mA
–100mA
–8
–80mA
2SB947, 2SB947A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
V
CE(sat)
— I
C
I
C
/I
B
=30
Collector power dissipation P
C
(W)
Collector current I
C
(A)
40
–3
–1
T
C
=100˚C
25˚C
–25˚C
30
–6
–60mA
–40mA
– 0.3
20
(1)
–4
–30mA
–20mA
– 0.1
10
(3)
(4)
0
0
20
40
60
(2)
–2
–10mA
– 0.03
0
80 100 120 140 160
0
–2
–4
–6
–8
–10
–12
– 0.01
– 0.1
– 0.3
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–10
h
FE
— I
C
I
C
/I
B
=30
10000
V
CE
=–2V
10000
3000
1000
300
100
30
10
3
f
T
— I
C
V
CE
=–10V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
–3
1000
300
100
30
10
3
1
– 0.1 – 0.3
T
C
=100˚C
25˚C
–1
T
C
=–25˚C
100˚C
25˚C
– 0.3
–25˚C
– 0.1
– 0.03
– 0.01
– 0.1
Transition frequency f
T
(MHz)
–10
–30
–100
3000
– 0.3
–1
–3
–10
–1
–3
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
10
f=1MHz
T
C
=25˚C
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(–I
B1
=I
B2
)
V
CC
=–20V
T
C
=25˚C
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
T
C
=25˚C
I
CP
I
C
10ms
–3
–1
DC
t=1ms
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
– 0.1 – 0.3
Switching time t
on
,t
stg
,t
f
(
µs
)
3
Collector current I
C
(A)
–10
1
t
stg
0.3
t
on
0.1
t
f
0.03
– 0.3
– 0.1
– 0.03
0.01
–1
–3
–10
–30
–100
0
–1
–2
–3
–4
–5
–6
–7
–8
– 0.01
– 0.1 – 0.3
–1
–3
–10
–30
2SB947A
–100
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
2SB947
Power Transistors
R
th(t)
— t
10
3
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
2SB947, 2SB947A
Thermal resistance R
th
(t) (˚C/W)
10
2
10
(2)
1
10
–1
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
