Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC1096
DESCRIPTION
・With
TO-202 package
・Low
breakdown voltage
・High
current
・High
f
T
APPLICATIONS
・For
audio frequency power amplifier
and low speed switching applications
・Suitable
for output stages of 3 to 5 watts
car radio sets and car stereo
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-202) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
Collector power dissipation
T
C
=25℃
Junction temperature
Storage temperature
10
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
40
30
5
3
6
0.6
1.2
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
V
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=3A ;I
B
=0.3A
I
C
=3A ;I
B
=0.3A
I
C
=10mA; I
B
=0
V
CB
=30V;I
E
=0
V
EB
=3V; I
C
=0
I
C
=20mA ; V
CE
=5V
I
C
=1.0A ; V
CE
=5V
I
E
=0; V
CB
=10V;f=1.0MHz
I
C
=0.1A ; V
CE
=5V
20
40
55
65
30
MIN
TYP.
2SC1096
MAX
2.0
2.0
UNIT
V
V
V
1.0
1.0
μA
μA
250
pF
MHz
h
FE-1
classifications
N
40-60
M
50-100
L
80-160
K
120-250
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1096
Fig.2 outline dimensions
JMnic
