Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1568
DESCRIPTION
·With
TO-126 package
·Complement
to type 2SA900
·Low
collector saturation voltage
APPLICATIONS
·For
low voltage type medium output
power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
a
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
18
18
5
1
2
1.2
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE-1
h
FE-2
I
CBO
I
CEO
C
OB
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
DC current gain
Collector cut-off current
Collector cut-off current
Output capacitance
Transition frequency
CONDITIONS
I
C
=1A ;I
B
=50m A
B
2SC1568
MIN
TYP.
MAX
0.5
1.2
UNIT
V
V
V
V
V
I
C
=0.5A ;I
B
=50m A
I
C
=10μA;I
E
=0
I
C
=1mA; I
B
=0
I
E
=10μA; I
C
=0
I
C
=500mA ; V
CE
=2V
I
C
=1.5A ; V
CE
=2V
V
CB
=10V ; I
E
=0
V
CE
=18V ; I
B
=0
I
E
=0; V
CB
=6V; f=1MHz
I
E
=-50mA ;V
CB
=6V;f=200MHz
12
150
18
18
5
90
50
280
1
10
μA
μA
pF
MHz
h
FE-1
classifications
Q
90-155
R
130-210
S
180-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1568
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1568
4
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