2SC1651S
Transistors
High-voltage Amplifier Transistor (210V, 30mA)
2SC1651S
Features
1) High breakdown voltage, (V
CER
= 210V )
2) Complements the 2SA821S.
External dimensions
(Unit : mm)
SPT
4.0
3.0
2.0
(15Min.)
3Min.
0.45
2.5
5.0
(1) (2) (3)
0.5
0.45
(1)Emitter
(2)Collector
(3)Base
Taping specifications
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
Tj
Tstg
Limits
210
210
5
30
250
150
−55
to
+150
Unit
V
V
V
A
W
°C
°C
∗
∗
R
BE
=10kΩ
Electrical characteristics
(Ta=25
°
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
210
210
5
−
−
−
−
82
−
Typ.
−
−
−
−
−
−
−
60
6
Max.
−
−
−
−
1
1
1
270
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
I
C
=50µA
I
C
=100mA,
R
BE
=10kΩ
I
E
=50µA
V
CB
=150V
V
EB
=4.5V
I
C
/I
B
=2mA/0.2mA
V
CE
=3V,
I
C
=5A
V
CE
=5V
, I
E
= −2mA
, f=30MHz
V
CE
=10V
, I
E
=0A
, f=1MHz
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC1651S
SPT
PQ
TP
5000
Rev.A
1/2
2SC1651S
Transistors
Electrical characteristics curves
20
COLLECTOR CURRENT : Ic(mA)
COLLECTOR CURRENT : I
C
(mA)
Ta=25
°C
V
CE
=5V
20
Ta
=
25
°C
150
µ
A
135µA
DC CURRENT GAIN : h
FE
Ta=25
°C
V
CE
=10V
10
5
120µA
105µA
500
Pc
m
50
=2
2
1
0.5
90
µA
75µA
60µA
45µA
200
10
W
100
50
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
BASE TO EMITTER VOLTAGE : V
BE
(V)
30µA
15µA
0
I
B
=0µA
0
10
20
30
40
50
0.1 0.2
0.5
1
2
5
10
20
50
100
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Ground emitter propagation characteristics
Fig.2 Ground emitter output characteristics
Fig.3 DC current gain vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1 0.2
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25
°C
I
C
/I
B
=10
200
Ta=25
°C
V
CE
=5V
Ta=25
°C
f=1MHz
I
E
=0A
50
100
10
50
5
0.5
1
2
5
10
20
50
−0.5
−1
−2
−5
−10
−20
0.5
1
2
5
10
20
50
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Collector output capacitance
vs. collector-base voltage
EMITTER INPUT CAPACITANCE : Cib (pF)
100
50
Ta=25
°C
f=1MHz
I
C
=0A
20
10
5
0.5
1
2
5
10
20
50
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
