SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
2SC2412K
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
GENERAL PURPOSE TRANSISTOR
*
Feature:
Cob=2.0pF
(2) Complements the 2SA1037AK/2SA1576/
2SA1774/2SA1774H/2SA2029/2SA933AS.
(1) Low Cob.
Package:
SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vceo
Vcbo
Ic
P
D
Tj
Tstg
Rating
50
60
0.15
200
150
-55-150
Unit
V
V
A
mW
℃
℃
PIN:
STYLE
NO.1
B
E
C
1
2
3
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Vce(sat)
Cob
f
T
2
180
120
Min
60
50
7
0.1
0.1
560
0.4
3.5
V
PF
MHz
Typ
Max
Unit
V
V
V
uA
uA
Test Conditions
Ic= 50uA
Ic= 1mA
Ie= 50uA
Vcb= 60V
Veb=7V
Vce= 6V Ic= 1mA
Ic= 50mA Ib= 5mA
Vcb= 12V Ie=0 f=1MHz
Vce= 12V Ie= -2mA
f=100MHZ
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test: Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
2SC2412K=FR
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
2SC2412K
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
!
Electrical characterristic curves
50
100
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
20
10
5
Ta=100°C
25
°C
−5
5°C
80
0.50mA
mA
0.45
A
0.40m
0.35mA
10
Ta=25°C
30µA
27µA
0.30mA
8
24µA
21µA
60
0.25mA
0.20mA
6
18µA
15µA
2
1
40
0.15mA
0.10mA
4
12µA
9µA
0.5
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
BE
(V)
20
0.05mA
I
B
=0A
2
6µA
3µA
0
0
0.4
0.8
1.2
1.6
2.0
0
0
4
8
I
B
=0A
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics (
Ι
)
Fig.3
Grounded emitter output
characteristics (
ΙΙ
)
Ta=25°C
500
Ta=100°C
V
CE
=5V
3V
1V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
500
V
CE
=5V
0.5
Ta=25°C
DC CURRENT GAIN : h
FE
200
DC CURRENT GAIN : h
FE
200
25°C
−55°C
0.2
I
C
/I
B
=50
20
10
100
100
0.1
0.05
50
50
0.02
20
10
0.2
20
10
0.2
0.5 1
2
5
10 20
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
0.5
Fig. 6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.5
I
C
/I
B
=10
TRANSITION FREQUENCY : f
T
(MHz)
I
C
/I
B
=50
500
Ta=25°C
V
CE
=6V
0.2
Ta=100°C
25°C
−55°C
0.2
0.1
0.05
0.1
0.05
Ta=100°C
25°C
−55°C
200
0.02
100
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100
0.01
0.2
0.5 1
2
5
10
20
50 100 200
50
−0.5 −1
−2
−5
−10 −20
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
Ι
)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
Fig.9 Gain bandwidth product vs.
emitter current
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
2SC2412K
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
20
BASE COLLECTOR TIME CONSTANT : Cc·r
bb'
(ps)
10
Cib
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
200
Ta=25°C
f=32MH
Z
V
CB
=6V
100
5
50
2
Co
20
b
1
0.2
0.5
1
2
5
10
20
50
10
−0.2
−0.5
−1
−2
−5
−10
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
EMITTER CURRENT : I
E
(mA)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Fig.11 Base-collector time constant
vs. emitter current
