Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC2591 2SC2592
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SA1111/1112
・Good
linearity of h
FE
・High
V
CEO
APPLICATIONS
・For
audio frequency, high power
amplifiers application
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
2SC2591
Collector-base voltage
2SC2592
2SC2591
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Collector-emitter voltage
2SC2592
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
180
5
1
1.5
20
150
-55~150
V
A
A
W
℃
℃
Open emitter
180
150
V
CONDITIONS
VALUE
150
V
UNIT
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SC2591
I
C
=0.1mA ,I
B
=0
2SC2592
V
EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
I
E
=10μA ,I
C
=0
I
C
=0.5A; I
B
=50mA
I
C
=0.5A; I
B
=50mA
V
CB
=120V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=150mA ; V
CE
=10V
I
C
=500mA ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=50mA ; V
CE
=10V
CONDITIONS
2SC2591 2SC2592
MIN
150
TYP.
MAX
UNIT
V
CEO
Base-emitter
breakdown voltage
V
180
5
0.5
1.0
2.0
2.0
1
1
90
50
20
200
pF
MHz
330
V
V
V
μA
μA
h
FE-1
Classifications
Q
90-155
R
130-220
S
185-330
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2591 2SC2592
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic
