首页 > 器件类别 > 分立半导体 > 晶体管

2SC2714Y

Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,

器件类别:分立半导体    晶体管   

厂商名称:Galaxy Microelectronics

下载文档
器件参数
参数名称
属性值
Objectid
8328827721
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
LOW NOISE
最大集电极电流 (IC)
0.02 A
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
550 MHz
文档预览
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
Small reverse transfer capacitance:
Cre=0.7pF(Typ.)
Low noise Figure:NF=2.5dB(Typ.)
f=100MHz
2SC2714
Pb
Lead-free
APPLICATIONS
High frequency amplifier applications
FM,RF,MIX,IF Amplifier applications
SOT-23
ORDERING INFORMATION
Type No.
2SC2714
Marking
QR/QO/QY
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base current
Collector Dissipation
Junction and Storage Temperature
Value
40
30
4
20
4
100
-55 to+125
Units
V
V
V
mA
mA
mW
C098
Rev.A
www.gmesemi.com
1
Production specification
Silicon Epitaxial Planar Transistor
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
Test conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=18V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=6V,I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
= 1mA
V
CB
=6V, I
E
=0,f=1MHz
V
CE
=6V,I
E
=-1mA,f=100MHz
40
MIN
40
30
4
2SC2714
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
TYP
MAX
UNIT
V
V
V
0.5
0.5
200
0.3
550
0.7
2.5
5
V
MHz
pF
dB
μA
μA
CLASSIFICATION
Rank
Range
Marking
OF
R
40-80
QR
h
FE(1)
O
70-140
QO
Y
100-200
QY
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
C098
Rev.A
www.gmesemi.com
2
Production specification
Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
2SC2714
SOT-23
SOT-23
Dim
E
Min
2.70
1.10
Max
3.10
1.50
A
B
C
D
E
G
H
J
K
B
1.0 Typical
0.4 Typical
0.35
1.80
0.02
2.20
0.48
2.00
0.1
2.60
D
G
H
J
0.1 Typical
C
K
All Dimensions in mm
SOLDERING FOOTPRINT
0.95
0.95
2.00
0.90
0.80
Unit : mm
PACKAGE
Device
2SC2714
INFORMATION
Package
SOT-23
Shipping
3000/Tape&Reel
C098
Rev.A
www.gmesemi.com
3
查看更多>
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消