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2SC2884OTE12R

TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

器件类别:分立半导体    晶体管   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
包装说明
SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code
unknow
ECCN代码
EAR99
外壳连接
COLLECTOR
最大集电极电流 (IC)
0.8 A
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
35
JESD-30 代码
R-PSSO-F3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
SINGLE
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
120 MHz
VCEsat-Max
0.5 V
Base Number Matches
1
文档预览
2SC2884
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2884
Audio Frequency Amplifier Applications
High DC current gain: h
FE
= 100 to 320
Suitable for output stage of 1 watts amplifier
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1204
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
35
30
5
800
160
500
1000
150
−55
to 150
mW
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
SC-62
2-5K1A
°C
°C
TOSHIBA
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm
2
× 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21
2SC2884
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE (1)
DC current gain
(Note 3)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= 35 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
I
E
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 700 mA
I
C
= 500 mA, I
B
= 20 mA
V
CE
= 1 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Min
30
100
35
0.5
Typ.
120
13
Max
0.1
0.1
320
0.5
0.8
V
V
MHz
pF
Unit
μA
μA
V
Note 3: h
FE (1)
classification O: 100 to 200, Y: 160 to 320
Marking
Part No. (or abbreviation code)
P
Lot No.
Characteristics indicator
Note 4
Note 4: A line to the right of a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-21
2SC2884
I
C
– V
CE
1000
Common emitter
800
8
7
6
5
4
600
3
Ta
=
25°C
500
1000
h
FE
– I
C
Common emitter
VCE
=
1 V
Ta
=
100°C
25
−25
(mA)
Collector current I
C
DC current gain h
FE
6
7
300
100
50
30
400
2
200
IB
=
1 mA
0
0
0
1
2
3
4
10
1
3
10
30
100
300
1000
Collector-emitter voltage
V
CE
(V)
Collector current I
C
(mA)
V
CE (sat)
– I
C
1
Common emitter
800
IC/IB
=
25
I
C
– V
BE
Common emitter
VCE
=
1 V
Collector-emitter saturation voltage
V
CE (sat)
(V)
0.5
0.3
(mA)
Collector current I
C
Ta
=
100°C
25
−25
600
0.1
0.05
0.03
400
Ta
=
100°C 25
200
−25
0.01
1
3
10
30
100
300
1000
0
0
0.4
0.8
1.2
1.6
Collector current I
C
(mA)
Base-emitter voltage
V
BE
(V)
Safe Operating Area
3000
IC max (pulse)*
1000 IC max (continuous)
10 ms*
1 ms*
1.2
P
C
– Ta
P
C
(W)
(1) Mounted on a ceramic
1.0
(1)
substrate (250 mm
2
×
0.8 t)
(2) No heat sink
0.8
(mA)
500
300
100 ms*
Collector current I
C
100
50
DC operation
Ta
=
25°C
Collector power dissipation
0.6
(2)
30
*:
Single nonrepetitive pulse
Ta
=
25°C
Curves must be derated
10
5
3
0.3
linearly with increase in
temperature.
Tested without a substrate.
1
3
10
30
VCEO max
100
300
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Collector-emitter voltage
V
CE
(V)
Ambient temperature Ta (°C)
3
2009-12-21
2SC2884
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
4
2009-12-21
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参数对比
与2SC2884OTE12R相近的元器件有:2SC2884OTE12L、2SC2884YTE12L、2SC2884-O、2SC2884YTE12R、2SC2884TE12R、2SC2884TE12L。描述及对比如下:
型号 2SC2884OTE12R 2SC2884OTE12L 2SC2884YTE12L 2SC2884-O 2SC2884YTE12R 2SC2884TE12R 2SC2884TE12L
描述 TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
包装说明 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
最大集电极电流 (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
集电极-发射极最大电压 30 V 30 V 30 V 30 V 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 35 35 35 100 35 35 35
JESD-30 代码 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V
Base Number Matches 1 1 1 1 1 1 -
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