Ordering number : EN0779E
2SA1209 / 2SC2911
SANYO Semiconductors
DATA SHEET
2SA1209 / 2SC2911
Features
•
•
•
•
PNP / NPN Epitaxial Planar Silicon Transistors
160V / 140mA High-Voltage Switching
and AF 100W Predriver Applications
Adoption of FBET process.
High breakdown voltage.
Good linearity of hFE and small Cob.
Fast switching time.
Specifications
( ) : 2SA1209
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(-
-)180
(-
-)160
(--)5.0
(-
-)140
(-
-)200
1.0
10
150
--55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61307CB TI IM TC-00000752 / 70502TN (KT) / 71598HA (KT) / D251MH / 5147KI / 3135KI / O193KI,TS No.0779-1/5
2SA1209 / 2SC2911
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
ton
tstg
tf
Conditions
VCB=(--)80V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(-
-)10mA
VCE=(--)10V, IC=(--)10mA
VCB=(--)10V, f=1MHz
IC=(--)50mA, IB=(--)5mA
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
100*
150
(4.0)3.0
(--0.14)0.07
0.1
1.5
0.1
(--0.4)0.3
Ratings
min
typ
max
(--)0.1
(--)0.1
400*
MHz
pF
V
µs
µs
µs
Unit
µA
µA
*
: The 2SA1209/2SC2911 are classified by 10mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Package Dimensions
unit : mm (typ)
7515-002
Switching Time Test Circuit
IB1
8.0
3.0
4.0
2.7
IN
3kΩ
IB2
RB
OUT
2kΩ
11.0
50Ω
5kΩ
+
1µF
+
1µF
20V
1.6
0.8
0.8
0.6
1.5
3.0
7.0
0.5
15.5
--2V
IC=10IB1=--10IB2=10mA
For PNP, minus sign is omitted.
1
2
3
1.2
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
2.4
4.8
--140
IC -- VCE
2SA1209
140
IC -- VCE
mA
0.6
--120
Collector Current, IC -- mA
--100
m
--0.4
A
--0.3m
A
Collector Current, IC -- mA
.6
--0
mA
120
0.5
mA
2SC2911
mA
--0.5
0.4mA
100
0.3mA
80
--80
--60
--0.2mA
60
0.2mA
--40
--0.1mA
--20
0
0
40
0.1mA
20
IB=0mA
--10
--20
--30
--40
--50
--60
--70
0
0
10
20
30
40
50
IB=0mA
60
70
Collector-to-Emitter Voltage, VCE -- V
ITR03021
Collector-to-Emitter Voltage, VCE -- V
ITR03022
No.0779-2/5
2SA1209 / 2SC2911
--140
IC -- VBE
2SA1209
140
IC -- VBE
2SC2911
--120
120
Collector Current, IC -- mA
--100
Collector Current, IC -- mA
--
0.2
--
0.4
--
0.6
--
0.8
Base-to-Emitter Voltage, VBE -- V
--
1.0
ITR03023
100
--80
80
--60
60
--40
40
--20
0
0
20
0
0
0.2
0.4
0.6
0.8
1.0
ITR03024
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
hFE -- IC
2SA1209
VCE=--5V
7
5
2SC2911
VCE=5V
DC Current Gain, hFE
DC Current Gain, hFE
3
2
3
2
100
7
5
3
2
100
7
5
3
2
10
5
7 --1.0
2
3
5
7 --10
2
3
5
10
Collector Current, IC -- mA
3
7 --100
2
ITR03025
3
5
7 1.0
2
3
5
7 10
2
3
5
f T -- IC
Collector Current, IC -- mA
7 100
2
ITR03026
f T -- IC
Gain-Bandwidth Product, f T -- MHz
2
100
100
7
5
Gain-Bandwidth Product, f T -- MHz
2SA1209
VCE=--10V
2
100
100
7
5
2SC2911
VCE=10V
3
10
2
3
10
2
10
--1.0
10
2
3
5
7
--10
2
3
5
Collector Current, IC -- mA
100
7
5
7 --100
2
ITR03027
100
1.0
2
3
5
7
10
2
3
5
Cob -- VCB
Collector Current, IC -- mA
7 100
2
ITR03028
Cob -- VCB
2SA1209
f=1MHz
7
5
2SC2911
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
3
100
2
3
100
2
10
7
5
10
3
2
10
7
5
10
3
2
1.0
--1.0
2
3
5
7
--10
2
3
5
Collector-to-Base Voltage, VCB -- V
7 --100
ITR03029
1.0
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
100
ITR03030
7
No.0779-3/5
2SA1209 / 2SC2911
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
2
VCE(sat) -- IC
2SA1209
IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
1.0
7
5
3
2
VCE(sat) -- IC
2SC2911
IC / IB=10
--1.0
7
5
3
2
0.1
7
5
3
2
5
7 1.0
2
3
5
7 10
2
3
5
7 100
2
ITR03032
--0.1
7
5
3
2
5
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
ITR03031
Collector Current, IC -- mA
--10
7
5
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
VBE(sat) -- IC
Collector Current, IC -- mA
10
7
5
VBE(sat) -- IC
2SA1209
IC / IB=10
2SC2911
IC / IB=10
3
2
3
2
--1.0
7
5
3
5
7 --1.0
2
3
5
7 --10
2
3
5
1.0
7
5
3
5
7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC -- mA
5
3
2
7 --100
2
ITR03033
ASO
Collector Current, IC -- mA
1.2
7 100
2
ITR03034
PC -- Ta
2SA1209 / 2SC2911
ICP=200mA
IC=140mA
DC
op
era
t
Collector Dissipation, PC -- W
1.0
Collector Current, IC -- mA
s
1m
1s
100
7
5
3
2
10
7
5
3
2
2
0.8
No
0.6
ion
he
a
ts
in
k
0.4
2SA1209 / 2SC2911
DC Single pulse
For PNP, minus sign is omitted
3
5
7 10
2
3
5
7 100
2
3
5
0.2
0
0
20
40
60
80
100
120
140
160
ITR03035
Collector-to-Emitter Voltage, VCE -- V
12
Ambient Temperature, Ta --
°C
ITR03036
PC -- Tc
2SA1209 / 2SC2911
Collector Dissipation, PC -- W
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
ITR03037
No.0779-4/5
2SA1209 / 2SC2911
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of June, 2007. Specifications and information herein are subject
to change without notice.
PS No.0779-5/5
