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2SC3622A-K

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:NEC(日电)

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器件参数
参数名称
属性值
厂商名称
NEC(日电)
零件包装代码
TO-92
包装说明
CYLINDRICAL, O-PBCY-W3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
0.15 A
集电极-发射极最大电压
50 V
配置
SINGLE
最小直流电流增益 (hFE)
1600
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-W3
JESD-609代码
e0
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN LEAD
端子形式
WIRE
端子位置
BOTTOM
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
250 MHz
最大关闭时间(toff)
1940 ns
最大开启时间(吨)
130 ns
Base Number Matches
1
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DATA SHEET
SILICON TRANSISTORS
2SC3622, 3622A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES
• High h
FE
:
h
FE
= 1000 to 3200 @V
CE
= 5.0 V, I
C
= 1.0 mA
• Low V
CE(sat)
:
V
CE(sat)
= 0.07 V TYP. @I
C
/I
B
= 50 mA/5.0 mA
• High V
EBO
:
V
EBO
: 12 V (2SC3622)
V
EBO
: 15 V (2SC3622A)
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
P
T
T
j
T
stg
12
150
250
150
−55
to +150
Ratings
2SC3622 2SC3622A
60
50
15
Unit
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage temperature
Fall time
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
*
V
BE
*
V
CE(sat)
*
V
BE(sat)
*
f
T
C
ob
t
on
t
stg
t
off
Conditions
V
CB
= 50 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
V
CE
= 5.0 V, I
C
= 1.0 mA
V
CE
= 5.0 V, I
C
= 100 mA
V
CE
= 5.0 V, I
C
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
V
CE
= 5.0 V, I
E
=
−10
mA
V
CB
= 5 V, I
E
= 0, f = 1.0 MHz
V
CC
= 10 V, V
BE(off)
= –2.7 V
I
C
= 50 mA
I
B1
=
−I
B2
= 1 mA
1000
200
1800
350
560
0.07
0.8
250
3.0
0.13
0.72
1.22
0.30
1.2
mV
V
V
MHz
pF
µ
s
MIN.
TYP.
MAX.
100
100
3200
Unit
nA
nA
µ
s
µ
s
* Pulse test PW
350
µ
s, duty cycle
2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16151EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC3622, 3622A
h
FE
CLASSIFICATION
Marking
h
FE1
L
1000 to 2000
K
1600 to 3200
2
Data Sheet D16151EJ1V0DS
2SC3622, 3622A
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Data Sheet D16151EJ1V0DS
3
2SC3622, 3622A
4
Data Sheet D16151EJ1V0DS
2SC3622, 3622A
[MEMO]
Data Sheet D16151EJ1V0DS
5
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参数对比
与2SC3622A-K相近的元器件有:2SC3622A-L。描述及对比如下:
型号 2SC3622A-K 2SC3622A-L
描述 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43B, 3 PIN
厂商名称 NEC(日电) NEC(日电)
零件包装代码 TO-92 TO-92
包装说明 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
针数 3 3
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 0.15 A 0.15 A
集电极-发射极最大电压 50 V 50 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 1600 1000
JEDEC-95代码 TO-92 TO-92
JESD-30 代码 O-PBCY-W3 O-PBCY-W3
JESD-609代码 e0 e0
元件数量 1 1
端子数量 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL
极性/信道类型 NPN NPN
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子面层 TIN LEAD TIN LEAD
端子形式 WIRE WIRE
端子位置 BOTTOM BOTTOM
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz
最大关闭时间(toff) 1940 ns 1940 ns
最大开启时间(吨) 130 ns 130 ns
Base Number Matches 1 1
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