Ordering number : EN2217B
2SA1450 / 2SC3708
SANYO Semiconductors
DATA SHEET
2SA1450 / 2SC3708
Features
•
•
•
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency Driver Applications
Adoption of FBET process.
AF amp, AF power amp.
High breakdown voltage : VCEO > 80V.
Specifications
( ) : 2SA1450
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
(--)100
(--)80
(--)5
(--)500
(--)800
(--)100
600
150
--55 to +150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
Conditions
VCB=(--)60V, IE=0A
VEB=(-
-)4V, IC=0A
VCE=(--)5V, IC=(-
-)50mA
VCE=(--)5V, IC=(-
-)400mA
100*
60
Ratings
min
typ
max
(--)0.1
(--)0.1
400*
Unit
μA
μA
Continued on next page.
*:
The 2SA1450 / 2SC3708 are classified by 50mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
N2509CA TK IM / O3103TN (KT)/71598HA (KT)/D129MO/2197TA, TS No.2217-1/5
2SA1450 / 2SC3708
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
VCE=(-
-)10V, IC=(--)10mA
VCB=(-
-)10V, f=1MHz
IC=(--)400mA, IB=(--)40mA
IC=(--)400mA, IB=(--)40mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10μA, IC=0A
(--)100
(--)80
(--)5
Ratings
min
typ
120
(7)5
(--0.2)0.16
(--)0.9
(-
-)0.5
(-
-)1.2
max
Unit
MHz
pF
V
V
V
V
V
Package Dimensions
unit : mm (typ)
7522-002
5.0
4.0
4.0
0.45
0.5
0.6
2.0
0.45
1 2 3
14.0
5.0
0.44
1 : Emitter
2 : Collector
3 : Base
1.3
1.3
SANYO : NP
--
500
2SA1450
IC -- VCE
14m
A
600
IC -- VCE
2SC3708
Collector Current, IC -- mA
Collector Current, IC -- mA
mA
--
400
--
300
A
12m A
10m
8mA
6mA
4mA
2mA
mA
500
14
mA
A
12m
16
10mA
8mA
400
16
6mA
300
4mA
2mA
--
200
200
--
100
100
0
0
IB=0mA
--
0.2
--
0.4
--
0.6
--
0.8
Collector-to-Emitter Voltage, VCE -- V
--
1.0
ITR03633
0
IB=0mA
0
0.2
0.4
0.6
0.8
1.0
ITR03634
Collector-to-Emitter Voltage, VCE -- V
No.2217-2/5
2SA1450 / 2SC3708
--
20
IC -- VCE
2SA1450
μ
--80
A
20
IC -- VCE
2SC3708
80
μA
70
μA
--7
0
μ
A
Collector Current, IC -- mA
--50
μ
A
Collector Current, IC -- mA
--
16
A
--60
μ
16
--
12
--40
μ
A
12
60
μA
50
μA
8
--
8
--30
μ
A
40
μA
30
μA
--20μA
--
4
--10
μA
4
20
μA
10μA
0
0
IB=0
μA
--
10
--
20
--
30
--
40
--
50
Collector-to-Emitter Voltage, VCE -- V
ITR03631
0
IB=0
μA
0
10
20
30
40
50
ITR03632
Collector-to-Emitter Voltage, VCE -- V
600
--
600
--
500
IC -- VBE
2SA1450
VCE=--5V
IC -- VBE
2SC3708
VCE=5V
500
Collector Current, IC -- mA
Collector Current, IC -- mA
--25
°
C
Ta=75
°
C
Ta=75
°
C
--
400
--
300
--
200
--
100
0
400
300
200
100
0
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
--
1.2
Base-to-Emitter Voltage, VBE -- V
ITR03635
0
0
0.2
0.4
0.6
0.8
--25
°
C
1.0
25
°
C
25
°
C
1.2
ITR03636
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
7
5
hFE -- IC
2SA1450
VCE=--5V
2SC3708
VCE=5V
DC Current Gain, hFE
2
25
°
C
DC Current Gain, hFE
3
Ta=75
°
C
3
2
Ta=75
°C
25
°C
--25
°
C
100
7
5
3
2
--25
°C
100
7
5
3
2
10
7
--
1.0
2
3
5 7
--
10
2
3
5
7
--
100
2
3
5
7
--
1000
10
1.0
2
3
5
10
2
3
5
100
2
3
Collector Current, IC -- mA
5
ITR03639
1000
f T -- IC
Collector Current, IC -- mA
5
1000
ITR03640
f T -- IC
Gain-Bandwidth Product, f T -- MHz
3
2
Gain-Bandwidth Product, f T -- MHz
2SA1450
VCE=--10V
7
5
3
2
2SC3708
VCE=10V
100
7
5
3
2
100
7
5
3
2
10
--
1.0
2
3
5
--
10 2 3 5 7
--
100 2
Collector Current, IC -- mA
7
3
5 7
--
1000
ITR03637
10
1.0
2
3
5
10
2
3
5
100
2
3
Collector Current, IC -- mA
5
1000
ITR03638
No.2217-3/5
2SA1450 / 2SC3708
5
Cob -- VCB
2SA1450
f=1MHz
3
2
Cob -- VCB
2SC3708
f=1MHz
3
Output Capacitance, Cob -- pF
2
Output Capacitance, Cob -- pF
7
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03641
2
3
5
7
10
7
5
10
7
5
3
2
3
2
1.0
--
1.0
1.0
1.0
2
3
5
7
10
2
3
5
--
1.0
7
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
1.0
7 100
ITR03642
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
2SA1450
IC / IB=10
7
5
3
2
2SC3708
IC / IB=10
--
0.1
7
5
3
2
0.1
7
5
3
2
--
0.01
7
--
1.0
2
3
5 7
--
10
2
3
5 7
--
100
2
3
5 7
--
1000
ITR03643
0.01
1.0
2
3
5
10
2
3
5
100
2
3
Collector Current, IC -- mA
ASO
Collector Current, IC -- mA
700
5
1000
ITR03644
1000
5
PC -- Ta
Collector Current, IC -- mA
3
2
100
5
3
2
10
5
3
10
DC
0m
Collector Dissipation, PC -- mW
ICP=800mA
IC=500mA
2SA1450 / 2SC3708
2SA1450 / 2SC3708
600
op
era
tio
n
(For PNP, minus sign is omitted.)
1.0
2
3
5
10
2
3
5
s
1m
s
m
10
s
500
400
300
200
100
2
5
Collector-to-Emitter Voltage, VCE --
2
100
V
ITR03645
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR03646
No.2217-4/5
2SA1450 / 2SC3708
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of November, 2009. Specifications and information herein are subject
to change without notice.
PS No.2217-5/5
