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2SC3930-VB-C

Small Signal Bipolar Transistor

器件类别:分立半导体    晶体管   

厂商名称:SECOS

厂商官网:http://www.secosgmbh.com/

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器件参数
参数名称
属性值
包装说明
,
Reach Compliance Code
unknow
Base Number Matches
1
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2SC3930
Elektronische Bauelemente
0.03A , 30V
NPN Silicon Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
SOT-323
A
3
3
For high-frequency Amplification Complementary
to 2SA1532
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
1
L
Top View
2
C B
1
2
K
E
D
CLASSIFICATION OF h
FE
Product-Rank
Range
2SC3930-VB
70~140
2SC3930-VC
110~220
F
G
H
J
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS
( T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
30
20
5
30
150
150, -55~150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS
( T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Common emitter
capacitance
Noise Figure
Reverse transfer impedance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
Min.
30
20
5
-
-
70
150
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
220
-
1.5
4
50
Unit
V
V
V
A
A
MHz
pF
dB
Testing Condition
I
C
=100μA, I
E
=0
I
C
=100μA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=10V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
E
=1mA, f=200MHz
V
CB
=10V, I
C
=1mA, f=10.7MHz
V
CB
=10V, I
C
=1mA, f=5MHz
V
CB
=10V, I
C
=1mA, f=2MHz
reverse
transfer
C
re
NF
Z
rb
Any changes of specification will not be informed individually.
08-Mar-2011 Rev. A
Page 1 of 3
2SC3930
Elektronische Bauelemente
0.03A , 30V
NPN Silicon Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
08-Mar-2011 Rev. A
Page 2 of 3
2SC3930
Elektronische Bauelemente
0.03A , 30V
NPN Silicon Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
08-Mar-2011 Rev. A
Page 3 of 3
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参数对比
与2SC3930-VB-C相近的元器件有:2SC3930-C、2SC3930-VC、2SC3930-VC-C、2SC3930-VB。描述及对比如下:
型号 2SC3930-VB-C 2SC3930-C 2SC3930-VC 2SC3930-VC-C 2SC3930-VB
描述 Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Reach Compliance Code unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1
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