Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3949
DESCRIPTION
・With
TO-3PML package
・High
voltage ,high speed
APPLICATIONS
・For
TV horizontal output and power
switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
固电
PARAMETER
Collector-base voltage
导½
半
HA
INC
Collector current
Collector dissipation
Collector-emitter voltage
Emitter-base voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
CT
NDU
O
MAX
850
500
7
15
UNIT
V
V
V
A
W
℃
℃
Open collector
T
C
=25℃
80
150
-55~150
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC3949
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=10mA ;R
BE
=∞
500
V
V
(BR)CBO
V
(BR)EBO
Collector-base breakdown voltage
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
850
V
Emitter-base breakdown voltage
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=10A ;I
B
=2A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=10A ;I
B
=2A
V
CE
=800V; I
E
=0
T
C
=100℃
V
EB
=6V ;I
C
=0
1.5
0.1
1.0
0.1
V
I
CBO
Collector cut-off current
mA
I
EBO
Emitter cut-off current
h
FE
f
T
DC current gain
固电
Transition frequency
导½
半
I
C
=10A ; V
CE
=5V
C
OB
ANG
CH
IN
Output capacitance
MIC
E SE
I
C
=2A ; V
CE
=10V
OR
CT
NDU
O
10
30
20
260
mA
MHz
I
E
=0 ; V
CB
=10V;f=1MHz
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3949
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimensions
3
GD32 MCU
