DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC4093
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteritics, and is
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
2.9±0.2
(1.8)
0.85 0.95
PACKAGE DIMENSIONS
(Units: mm)
0.4
−0.05
0.4
−0.05
0.16
5°
+0.1
−0.06
2.8
−0.3
+0.2
1.5
−0.1
2
3
4
5°
0 to 0.1
+0.2
+0.1
+0.1
FEATURES
• Low Noise
NF = 1.1 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
• High Power Gains
1
0.6
−0.05
S
21e
2
= 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ORDERING INFORMATION
PART
NUMBER
2SC4093-T1
QUANTITY
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
1.1
−0.1
0.8
+0.2
5°
5°
2SC4093-T2
3 Kpcs/Reel.
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
100
200
150
V
V
V
mA
mW
65 to +150
C
C
Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
©
0.4
−0.05
+0.1
+0.1
(1.9)
1991
2SC4093
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
50
120
7.0
0.6
11
13
1.1
2.0
0.95
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
A
A
S
21e
2
NF
Classification of h
FE
Rank
Marking
Range
R26/RBF *
R26
50 to 100
R27/RBG *
R27
80 to 160
R28/RBH *
R28
125 to 250
* Old Specification / New Specification
h
EF
Test Condtitions: V
CE
= 10 V, I
C
= 20 mA
2
2SC4093
TYPICAL CHARACTERISTICS (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-Total Power Dissipation-mW
Free Air
C
re
-Feed-back Capacitance-pF
200
2
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 GHz
1
0.5
100
0.2
0
50
100
150
0.1
1
2
5
10
20
T
A
-Ambient Temperature-°C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 10 V
20
V
CB
-Collector to Base Voltage-V
INSERTION GAIN vs.
COLLECTOR CURRENT
V
CE
= 10 V
f = 1.0 GHz
|S
21e
|
2
-Insertion Gain-dB
100
h
FE
-DC Current Gain
50
10
20
10
0.5
1
5
10
50
0
0.5
1
2
5
10
20
50
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
20
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insetion Gain -dB
10
5
30
I
C
-Collector Current-mA
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
V
CE
= 10 V
I
C
= 20 mA
G
max
20
|S
21e
|
2
2
1
0.6
1
2
5
10
20
40
10
0
0.1
0.2
0.5
f-Frequency-GHz
1.0
2.0
I
C
-Collector Current-mA
3
2SC4093
NOISE FIGURE vs.
COLLECTOR CURRENT
7
6
NF-Noise Figure-dB
5
4
3
2
1
0
0.5
V
CE
= 10 V
f = 1.0 GHz
1
5
10
50 70
I
C
-Collector Current-mA
S-PARAMETER
V
CE
=10 V, I
C
= 5 mA, Z
O
= 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S
11
0.730
0.583
0.522
0.518
0.519
0.539
0.552
0.555
0.570
0.582
S
11
76.5
118.8
146.2
166.5
178.3
166.6
157.4
149.0
140.9
134.0
S
21
11.712
7.379
5.551
4.026
3.406
2.744
2.512
2.122
2.028
1.740
S
21
129.6
105.6
92.2
80.8
71.9
63.1
55.2
48.5
41.9
36.4
S
12
0.048
0.056
0.072
0.072
0.088
0.089
0.106
0.111
0.134
0.135
S
12
47.2
43.2
38.6
40.5
40.5
44.3
45.6
44.8
49.3
47.3
S
22
0.772
0.600
0.526
0.471
0.441
0.428
0.406
0.388
0.380
0.367
S
22
28.1
34.9
37.7
39.8
41.6
45.4
49.4
56.1
61.8
68.0
V
CE
= 10 V, I
C
= 20 mA, Z
O
= 50
f (MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S
11
0.454
0.395
0.384
0.408
0.420
0.442
0.455
0.468
0.486
0.502
S
11
114.9
153.0
172.8
173.4
162.6
154.7
147.7
141.2
133.9
128.7
S
21
19.635
10.412
7.454
5.318
4.450
3.571
3.253
2.737
2.618
2.237
S
21
111.0
93.3
84.4
75.5
68.8
61.4
54.6
49.0
43.0
38.4
S
12
0.033
0.041
0.060
0.073
0.094
0.103
0.127
0.137
0.165
0.170
S
12
46.1
58.1
55.6
61.1
58.2
58.7
55.3
53.1
52.1
48.4
S
22
0.497
0.359
0.315
0.283
0.256
0.247
0.227
0.212
0.198
0.186
S
22
42.5
41.2
41.0
42.5
43.2
47.8
53.0
62.2
67.4
75.5
4
2SC4093
S-PARAMETER
S
11e
, S
22e
-FREQUENCY
V
CE
= 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
1
0.6
2
0.2
S
11e
2.0 GHz
5
0.2
0.6
0
1
2.0 GHz
I
C
= 20 mA
S
22e
−0.2
I
C
= 5 mA
I
C
= 20 mA
0.2 GHz
I
C
= 5 mA
−0.6
−1
−2
0.2 GHz
−5
S
21e
-FREQUENCY
V
CE
= 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
90
120
I
C
= 20 mA
150
I
C
= 5 mA
S
21e
0.2 GHz
30
150
60
S
12e
-FREQUENCY
V
CE
= 10 V
freq. = 0.2 to 2 GHz (Step 200 MHz)
90
120
S
12e
60
I
C
= 20 mA
2.0 GHz
30
I
C
= 5 mA
2.0 GHz
0
4
8
S
21
S
21
12
16
20
0 180
0
0.2 GHz
0.04 0.08 0.12 0.16
0.2
0
2.0 GHz
180
−150
−30
−150
−30
−120
−90
−60
−120
−90
−60
5
嵌入式系统
