Ordering number:ENN2474A
NPN Triple Diffused Planar Silicon Transistor
2SC4109
400V/16A Switching Regulator Applications
Features
· High breakdown voltage and high reliability.
· High-speed switching.
· Wide ASO.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2022A
[2SC4109]
3.5
15.6
14.0
2.6
3.2
4.8
2.0
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.3
1.2
15.0
20.0
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25˚C
PW≤300µs, duty cycle≤10%
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Conditions
1.4
Ratings
500
400
7
16
32
6
2.5
140
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
VCB=400V, IE=0
VEB=5V, IC=0
Conditions
Ratings
min
typ
max
10
10
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71504TN (PC)/D1598HA (KT)/5257TA, TS No.2474–1/4
2SC4109
Continued from preceding page.
Parameter
Symbol
hFE1
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
hFE2
hFE3
VCE(sat)
VBE(sat)
fT
Cob
VCE=5V, IC=2A
VCE=5V, IC=10A
VCE=5V, IC=10mA
IC=10A, IB=2A
IC=10A, IB=2A
VCE=10V, IC=2A
VCB=10V, f=1MHz
500
400
7
400
0.5
2.5
0.3
20
230
Conditions
Ratings
min
15*
10
10
0.8
1.5
V
V
MHz
pF
V
V
V
V
µs
µs
µs
typ
max
50*
Unit
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=10mA, RBE=∞
V(BR)EBO IE=1mA, IC=0
VCEX(sus) IC=8A, IB1=0.8A, IB2=–3.2A, L=200µH, clamped
IC=12A, IB1=2.4A, IB2=–4.8A, RL=16.6
Ω,
ton
VCC=200V
IC=12A, IB1=2.4A, IB2=–4.8A, RL=16.6
Ω,
tstg
VCC=200V
IC=12A, IB1=2.4A, IB2=–4.8A, RL=16.6
Ω,
tf
VCC=200V
N
30 to 50
* : The h
FE
1 of the 2SC4109 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
L
15 to 30
M
20 to 40
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
OUTPUT
IB1
RB
IB2
RL
+
100µF
VBE= --5V
+
470µF
VCC=200V
VR
50Ω
12
IC -- VCE
200
0mA
1800mA
18
IC -- VBE(on)
VCE=5V
Collector Current, IC – A
10
1600m
A
Collector Current, IC – A
1400mA
1200mA
1000mA
800mA
600mA
16
14
12
10
8
25
°
C
8
6
4
2
4
200mA
2
0
0
2
4
6
8
IB=0
10
ITR06331
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-to-Emitter Voltage, VCE – V
Base-to-Emitter ON-State Voltage, VBE(on) – V
Ta=
1
--40
°
C
400mA
20
°
C
ITR06332
No.2474–2/4
2SC4109
3
2
hFE -- IC
VCE=5V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
3
2
VCE(sat) -- IC
IC / IB=5
100
1.0
7
5
3
2
DC Current Gain, hFE
7
5
3
2
Ta=120°C
25
°C
--40
°
C
10
7
5
3
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
ITR06333
0.1
7
5
3
0.01
2
3
Ta=120°C
C
25
°
°
C
0
--4
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC – A
10
7
Collector Current, IC – A
10
7
5 7 10
2 3
ITR06334
VBE(sat) -- IC
IC / IB=5
Switching Time, SW Time –
µs
SW Time -- IC
VCC=200V
IC=5IB1= --2.5IB2
tstg
R load
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
1.0
7
5
3
2
0.1
7
5
5
3
2
1.0
7
5
3
2
0.01
2 3
Ta= --40°C
25
°
C
120
°
C
t on
tf
5 7 0.1
2
3
5 7 1.0
2 3
Collector Current, IC – A
5 7 10
2 3
ITR06335
5
7 0.1
2
3
5
Collector Current, IC – A
7 1.0
2
3
5
7 10
2
3
ITR06336
Forward Bias A S O
5
3
2
ICP=32A
IC=16A
10
DC
op
era
≤50µs
10
m
s
1m
100
7
5
Reverse Bias A S O
ICP=32A
Collector Current, IC – A
5
3
2
1.0
5
3
2
0.1
5
3
2
Collector Current, IC – A
5
7 1000
ITR06337
10
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
s
0
µ
s
tio
n
S
/B
Li
ite
m
d
Tc=25°C
Single pulse
5
7
10
2
3
5
IB2= --3.2A Const.
L=100µH
Tc=25°C
5
7
Collector-to-Emitter Voltage, VCE – V
7 100
2
3
Collector-to-Emitter Sustain Voltage, VCEX(sus) – V
100
2
3
5
7
1000
160
140
PC -- Ta
ITR06338
Collector Dissipation, P
C
– W
120
100
80
60
40
20
0
0
20
No heat sink
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR06339
No.2474–3/4
2SC4109
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2004. Specifications and information herein are subject to
change without notice.
PS No.2474–4/4
