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2SC4482T

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, NMP, 3 PIN

器件类别:分立半导体    晶体管   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
Objectid
1481158753
包装说明
IN-LINE, R-PSIP-T3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
5 A
集电极-发射极最大电压
20 V
配置
SINGLE
最小直流电流增益 (hFE)
200
JESD-30 代码
R-PSIP-T3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
极性/信道类型
NPN
最大功率耗散 (Abs)
1 W
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
150 MHz
文档预览
Ordering number:ENN3235
NPN Epitaxial Planar Silicon Transistor
2SC4482
High-Current Switching Applications
Features
· Low saturation voltage.
· Large current capacity.
· High-speed switching.
Package Dimensions
unit:mm
2064A
[2SC4482]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Ratings
60
20
6
5
8
1
150
–55 to +150
4.0
1.0
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
S
140 to 280
T
200 to 400
U
280 to 560
Conditions
VCB=50V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
Ratings
min
typ
max
100
100
140*
95
150
45
560*
Unit
nA
nA
MHz
pF
* : The 2SC4482 is classified by 500mA h
FE
as follows :
Rank
hFE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91604TN (PC)/D2598HA (KT)/O269MO, TS No.3235–1/4
2SC4482
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
IC=3A, IB=60mA
IC=3A, IB=60mA
60
20
6
30
300
40
Conditions
Ratings
min
typ
220
max
500
1.5
Unit
mV
V
V
V
V
µs
µs
µs
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=1mA, RBE=∞
V(BR)EBO IE=10µA, IC=0
ton
tstg
tf
See specified test circuit.
See specified test circuit.
See specified test circuit.
Switching Time Test Circuit
PW=20µs
D.C.≤1%
IB1
IB2
RB
VR
50Ω
+
100µF
VBE= --5V
10IB1= --10IB2=IC=2A
+
470µF
VCC=10V
OUTPUT
INPUT
RL
5
IC -- VCE
A
40m
5
IC -- VCE
m
60
A
30mA
20mA
Collector Current, IC – A
4
Collector Current, IC – A
4
A
50m
A
40m
30mA
20mA
3
15mA
10mA
3
15mA
2
2
10mA
1
5mA
1
5mA
0
0
1
2
3
IB=0
4
5
ITR07106
0
0
0.2
0.4
0.6
IB=0
0.8
1.0
ITR07107
Collector-to-Emitter Voltage, VCE – V
6
Collector-to-Emitter Voltage, VCE – V
1000
IC -- VBE
VCE=2V
hFE -- IC
VCE=2V
7
5
5
Collector Current, IC – A
DC Current Gain, hFE
4
3
2
Ta=75
°C
25°C
3
--25
°
C
7
5
3
100
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR07108
Ta=
75
25
°
°
C
C
--25
°
C
2
2
5
Base-to-Emitter Voltage, VBE – V
0.01
2
3
5
Collector Current, IC – A
0.1
2
3
5
1.0
2
3
10
ITR07109
5
No.3235–2/4
2SC4482
1000
f T -- IC
VCE=10V
2
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, fT – MHz
7
5
3
2
Output Capacitance, Cob – pF
100
7
5
100
7
5
3
2
10
10
3
2
2
3
5
7
Collector Current, IC – mA
100
2
3
5
1000
ITR07110
7
10
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB – V
10
7
100
ITR07111
7
1000
VCE(sat) -- IC
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
VBE(sat) -- IC
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
7
5
3
2
5
3
2
C
25
°
75
°
C
°
C
100
7
5
3
2
10
5
0.01
2
3
5
Ta=
1.0
7
5
3
2
5
5
--2
Ta= --25°C
75
°
C
25
°
C
Collector Current, IC – A
0.1
2
3
5
1.0
2
3
10
ITR07112
1.2
5
0.01
2
3
5
Collector Current, IC – A
0.1
2
3
5
1.0
2
3
10
ITR07113
5
10
5
ASO
IC=5A
ICP=8A
PC -- Ta
Collector Current, IC – A
3
2
1.0
5
3
2
0.1
5
Collector Dissipation, P
C
– W
10
m
0m
s
s
10
1m
s
1.0
DC
0.8
op
era
tio
n
0.6
0.4
0.2
3
Single pulse
2
2
3
0.1
Tc=25°C
0
5
7 1.0
2
3
5
7
10
2
3
0
20
40
60
80
100
120
140
160
ITR07114
Collector-to-Emitter Voltage, VCE – V
Ambient Temperature, Ta – ˚C
ITR07115
No.3235–3/4
2SC4482
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2004. Specifications and information herein are
subject to change without notice.
PS No.3235–4/4
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