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April 1, 2003
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2SC4500(L)/(S)
Silicon NPN Epitaxial
ADE-208-894 (Z)
1st. Edition
September 2000
Application
Low frequency amplifier
Outline
DPAK
4
4
1
2
3
12
1. Base
2. Collector
3. Emitter
4. Collector
2, 4
1
S Type
3
3
L Type
2SC4500(L)/(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
P
C
P
C
*
1
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tj
Tstg
Ratings
60
60
7
1
2
0.8
8
150
–55 to +150
°C
°C
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
60
7
—
2000
—
—
—
—
Typ
—
—
—
—
—
—
100
600
Max
—
—
10
—
1.5
2.0
—
—
V
V
ns
ns
Unit
V
V
µA
Test Conditions
I
C
= 1 mA, R
BE
=
∞
I
E
= 0.1 mA, I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CE
= 10 V, I
C
= 500 mA*
1
I
C
= 500 mA, I
B
= 0.5 mA*
1
I
C
= 500 mA, I
B
= 0.5 mA*
1
V
CC
= 12 V, IC = 250 mA,
I
B1
= –I
B2
= 5 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note:
1. Pulse Test.
V
(BR)EBO
I
CBO
h
FE
V
CE (sat)
V
BE (sat)
t
on
t
off
2
2SC4500(L)/(S)
Maximum Collector Dissipation Curve
12
Collector power dissipation P
C
(W)
3.0
µ
s
)
100
5
°
C
s
=2
T
C
1m
s
on(
0 m
rati
= 1
C Ope
D
Area of Safe Operation
Collector current I
C
(A)
1.0
PW
8
0.3
4
0.1
Ta = 25°C, 1 Shot Pulse
0.03
1.0
0
50
100
Case temperature T
C
(°C)
150
3
10
30
100
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
1.0
200
180
160
140
120
120
DC Current Transfer Ratio vs.
Collector Current
100,000
DC current transfer ratio h
FE
Collector current I
C
(A)
0.8
0.6
30,000
100
80
µ
A
10,000
0.4
0.2
I
B
= 0, Ta = 25°C
0
1
2
3
4
5
Collector to emitter voltage V
CE
(V)
3,000
V
CE
= 10 V
Ta = 25°C
1,000
0.01
0.03
0.1
0.3
Collector current I
C
(A)
1.0
3
PCB设计
