Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4507
DESCRIPTION
・With
TO-220F package
・High
breakdown voltage
・High
speed switching performance
APPLICATIONS
・For
switching regulator and general
purpose power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
固电
导½
半
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
ANG
CH
IN
Open emitter
SEM
E
CONDITIONS
ON
IC
OR
DUT
VALUE
500
400
7
5
UNIT
V
V
V
A
W
℃
℃
Open base
Open collector
T
C
=25℃
40
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC4507
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustainig voltage
I
C
=100mA ; I
B
=0
400
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=1mA ; I
E
=0
500
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA ; I
C
=0
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=2A ;I
B
=0.4A
0.8
V
V
BEsat
Base-emitter saturation voltage
I
C
=2A ;I
B
=0.4A
1.2
V
I
CBO
Collector cut-off current
V
CB
=450V; I
E
=0
100
μA
I
EBO
Emitter cut-off current
h
FE-1
固电
DC current gain
导½
半
V
EB
=7V; I
C
=0
h
FE-2
DC current gain
ANG
CH
IN
MIC
E SE
I
C
=0.5A ; V
CE
=5V
I
C
=2A ; V
CE
=5V
DU
ON
25
20
OR
T
65
100
μA
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4507
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions
3
