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2SC460-A

SMALL SIGNAL TRANSISTOR, TO-92

器件类别:分立半导体    晶体管   

厂商名称:Hitachi (Renesas )

厂商官网:http://www.renesas.com/eng/

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器件参数
参数名称
属性值
包装说明
CYLINDRICAL, O-PBCY-W3
Reach Compliance Code
unknow
JEDEC-95代码
TO-92
JESD-30 代码
O-PBCY-W3
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
CYLINDRICAL
认证状态
Not Qualified
表面贴装
NO
端子形式
WIRE
端子位置
BOTTOM
Base Number Matches
1
文档预览
2SC460, 2SC461
Silicon NPN Epitaxial Planar
ADE-208-1046 (Z)
1st. Edition
Mar. 2001
Application
2SC460 high frequency amplifier, mixer
2SC461 VHF amplifier, mixer
Outline
TO-92 (2)
1. Emitter
2. Collector
3. Base
3
2
1
2SC460, 2SC461
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SC460
30
30
5
100
200
150
–55 to +150
2SC461
30
30
5
100
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
2
2SC460, 2SC461
Electrical Characteristics
(Ta = 25°C)
2SC460
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
30
30
5
35
26
Typ
0.63
0.6
230
1.8
29
2.0
Max
0.5
0.5
0.75
200
1.1
3.5
2SC461
Min
30
30
5
35
13
Typ
0.63
0.6
230
1.8
17
Max
0.5
0.5
0.75
200
1.1
3.5
V
MHz
pF
dB
dB
dB
Unit
V
V
V
µA
µA
V
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
I
E
= 10
µA,
I
C
= 0
V
CB
= 18 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA
V
CE
= 12 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 12 V, I
C
= 2 mA
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
V
CE
= 6 V, I
E
= –1 mA
f = 10.7 MHz
V
CE
= 6 V, I
E
= –1 mA
f = 100 MHz
V
CE
= 6 V, I
E
= –1 mA
f = 1MHz
R
g
= 500Ω
Base to emitter voltage V
BE
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
V
CE(sat)
Gain bandwidth product f
T
Collector output
capacitance
10.7 MHz power gain
100 MHz power gain
Noise figure
C
ob
PG
PG
NF
Note:
A
1. The 2SC460 and 2SC461 are grouped by h
FE
as follows.
B
60 to 120
C
100 to 200
35 to 70
3
2SC460, 2SC461
Small Signal y Parameters
(V
CE
= 6 V, I
C
= 1 mA, Emitter Common)
Item
Input admittance
Symbol f
yie
455 kHz
4.5 MHz
2SC460A,
2S461A
0.58 + j0.074
0.65 + j0.79
2SC460B,
2SC461B
0.42 + j0.068
0.50 + j0.7
0.61 + j1.9
5.6 + j12
–j0.003
–j0.04
–j0.13
–j1.0
37 – j0.1
35 – j1.2
34 – j2.5
28 – j19
2SC460C,
2SC461C
0.30 + j0.051
0.35 + j0.57
0.39 + j1.3
3.8 + j6.0
–j0.003
–j0.04
–j0.13
–j1.0
37 – j0.2
34 – j1.8
33 – j4.5
20 – j19
0.016 + j0.012
0.03 + j0.10
0.12 + j0.4
0.83 + j2.0
mS
mS
mS
Unit
mS
10.7 MHz 0.91 + j2.0
100 MHz 7.4 + j14
Reverse transfer admittance yre
455 kHz
4.5 MHz
–j0.003
–j0.04
10.7 MHz –j0.13
100 MHz –j1.0
Forward transfer admittance yfe
455 kHz
4.5 MHz
38 – j0.1
35 – j1.0
10.7 MHz 34 – j2.5
100 MHz 28 – j20
Output admittance
yoe
455 kHz
4.5 MHz
0.0098 + j0.009 0.013 + j0.009
0.02 + j0.09
0.023 + j0.092
0.11 + j0.4
0.50 + j2.0
10.7 MHz 0.11 + j0.4
100 MHz 0.40 + j1.7
4
2SC460, 2SC461
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
250
Collector Current I
C
(mA)
10
Typical Output Characteristics
100
80
200
8
150
6
60
100
4
40
20
µA
I
B
= 0
50
2
0
100
150
50
Ambient Temperature Ta (°C)
0
4
8
12
16
20
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
10
Collector Current I
C
(mA)
V
CE
= 6 V
DC Current Transfer Ratio h
FE
100
DC Current Transfer Ratio vs.
Collector Current
8
80
6
60
V
CE
= 6 V
4
40
2
20
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
0
0.1
3
10
0.3
1.0
Collector Current I
C
(mA)
30
5
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参数对比
与2SC460-A相近的元器件有:2SC460C、2SC461-A、2SC461-B、2SC461-C、2SC460A、2SC460B、2SC460-C、2SC460-B。描述及对比如下:
型号 2SC460-A 2SC460C 2SC461-A 2SC461-B 2SC461-C 2SC460A 2SC460B 2SC460-C 2SC460-B
描述 SMALL SIGNAL TRANSISTOR, TO-92 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 SMALL SIGNAL TRANSISTOR, TO-92 SMALL SIGNAL TRANSISTOR, TO-92 SMALL SIGNAL TRANSISTOR, TO-92 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 SMALL SIGNAL TRANSISTOR, TO-92 SMALL SIGNAL TRANSISTOR, TO-92
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow
JEDEC-95代码 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 代码 O-PBCY-W3 O-PBCY-T3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-T3 O-PBCY-T3 O-PBCY-W3 O-PBCY-W3
端子数量 3 3 3 3 3 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO NO
端子形式 WIRE THROUGH-HOLE WIRE WIRE WIRE THROUGH-HOLE THROUGH-HOLE WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Base Number Matches 1 1 1 1 1 1 1 1 1
包装说明 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3 - CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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