Ordering number : EN3399D
2SA1773 / 2SC4616
SANYO Semiconductors
DATA SHEET
2SA1773 / 2SC4616
Features
•
•
2SA1773 : PNP Epitaxial Planar Silicon Transistor
2SC4616 : NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Large current capacity (IC=2A).
High breakdown voltage (VCEO
≥400V).
Specifications
( ) : 2SA1773
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
TC=25°C
Conditions
Ratings
(--)400
(--)400
(--)5
(--)2
(--)4
1
15
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--)300V, IE=0A
VEB=(-
-)4V, IC=0A
VCE=(--)10V, IC=(-
-)100mA
VCE=(--)10V, IC=(-
-)100mA
VCB=(--)30V, f=1MHz
40*
(40)60
(25)15
Ratings
min
typ
max
(--)1.0
(--)1.0
200*
MHz
pF
Unit
μ
A
μ
A
Continued on next page.
*
: The 2SA1773 / 2SC4616 are classified by 100mA hFE as follws:
Rank
C
D
E
hFE
40 to 80
60 to 120
100 to 200
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
80509CB TK IM TC-00002035 / 93003TN (KT)/83198HA (KT)/30395TS/12894TH AX-8287/D251MH/5300TA (KOTO) X-6470, 6459 No.3399-1/5
2SA1773 / 2SC4616
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Strage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=(--)500mA, IB=(--)50mA
IC=(--)500mA, IB=(--)50mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--)400
(--)400
(--)5
(0.12)0.085
(3.0)4.0
(0.3)0.6
Ratings
min
typ
max
(-
-)1.0
(-
-)1.0
Unit
V
V
V
V
V
μs
μs
μs
Package Dimensions
unit : mm (typ)
7518-003
6.5
5.0
4
2.3
Package Dimensions
unit : mm (typ)
7003-003
1.5
0.5
4
7.0
5.5
1.5
6.5
5.0
2.3
0.5
0.8
1.6
7.5
1
0.5
2
0.8
1.2
3
0 to 0.2
1.2
0.6
0.6
2.5
0.85
0.7
5.5
7.0
0.85
0.5
1.2
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3 2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3 2.3
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
470μF
VCE=150V
OUTPUT
RL
+
100μF
VBE=--5V
IC=10IB1= --10IB2=500mA
RL=300Ω, RB=20Ω, at IC=500mA
For PNP, the polarity is reversed.
No.3399-2/5
2SA1773 / 2SC4616
--200
IC -- VCE
2SA1773
--2.0mA
--1.8mA
--1.6mA
--1.4mA
200
IC -- VCE
2SC4616
1.8
mA
1.6mA
1.4mA
1.2mA
Collector Current, IC -- mA
--120
Collector Current, IC -- mA
--160
160
--1.2mA
--1.0mA
120
1.0mA
0.8mA
80
--80
--0.8mA
--0.6mA
0.6mA
40
--40
--0.4mA
--0.2mA
IB=0mA
0
--4
--8
--12
--16
--20
ITR04605
0.4mA
0.2mA
0
0
0
4
8
12
16
IB=0mA
20
ITR04606
Collector-to-Emitter Voltage, VCE -- V
--2.0
--1.8
Collector-to-Emitter Voltage, VCE -- V
2.0
1.8
IC -- VBE
2SA1773
VCE=--10V
IC -- VBE
2SC4616
VCE=10V
Collector Current, IC -- A
--1.4
--1.2
--1.0
Collector Current, IC -- A
--1.6
1.6
1.4
1.2
1.0
25
°
C
Ta=75
°
C
0
0.2
0.4
0.6
°
C
25
°
C
0.8
--0.8
--0.6
--0.4
--0.2
0
0
--0.2
--0.4
--0.6
0.8
0.6
0.4
0.2
0
Ta=
75
--0.8
--25
°
C
--1.0
--1.2
--1.4
--25
°
C
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE -- V
3
2
ITR04607
3
2
hFE -- IC
Ta=75
°
C
25
°
C
Base-to-Emitter Voltage, VBE -- V
ITR04608
hFE -- IC
2SA1773
VCE=--10V
Ta=75
°
C
100
2SC4616
VCE=10V
100
DC Current Gain, hFE
7
5
3
2
DC Current Gain, hFE
--25°C
7
5
3
2
25
°
C
--25
°
C
10
7
5
3
3
5
7 --10
2
3
5 7 --100
2
3
10
7
5
3
Collector Current, IC --
3
5 7--1000 2 3
ITR04609
mA
3
3
5
7 10
2
3
5 7 100
2
3
5 7 1000
2
3
f T -- IC
Collector Current, IC -- mA
ITR04610
f T -- IC
Gain-Bandwidth Product, f T -- MHz
Gain-Bandwidth Product, f T -- MHz
2
2SA1773
VCE=--10V
2
2SC4616
VCE=10V
100
7
5
3
2
100
7
5
3
2
10
7
5
3
5
7 --10
2
3
5
7 --100
2
3
5
7 --1000
10
7
5
3
5
7
10
2
3
5
7 100
2
3
5 7 1000
ITR04612
Collector Current, IC -- mA
ITR04611
Collector Current, IC -- mA
No.3399-3/5
2SA1773 / 2SC4616
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
7 --10
2
3
5
7 --100
2
3
5
7 --1000
2
3
SW Time -- IC
Switching Time, SW Time --
μs
tst
g
Switching Time, SW Time --
μs
2SA1773
VCC=--150V
10IB1=--10IB2=IC
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
5
7 10
2
3
SW Time -- IC
tst
g
2SC4616
VCC=150V
10IB1=--10IB2=IC
tf
to
n
tf
to
n
5
7 100
2
3
5
Collector Current, IC -- mA
3
2
ITR04613
3
2
VCE(sat) -- IC
Collector Current, IC -- mA
7 1000
2 3
ITR04614
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA1773
IC / IB=10
2SC4616
IC / IB=10
--1.0
7
5
3
2
1.0
7
5
3
2
C
25
°
--0.1
7
5
3
3
5
7 --10
25
°
C
Ta=75
°
C
--25
°
C
2
3
5
7 --100
2
3
5
7 --1000
0.1
7
5
3
3
5
7
10
Ta=75
°
C
--25
°
C
2
3
5
7 100
2
3
Collector Current, IC -- mA
--10
7
ITR04615
10
7
VBE(sat) -- IC
Collector Current, IC -- mA
5 7 1000
ITR04616
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SA1773
IC / IB=10
2SC4616
IC / IB=10
5
3
2
3
2
--1.0
7
5
3
3
5
7 --10
2
3
5
7 --100
2
3
5
7 --1000
1.0
7
5
3
3
5
7
10
2
3
5
7 100
2
3
Ta=--25
°
C
Ta=--25
°
C
75
°
C
25
°
C
75
°
C
25
°
C
5 7 1000
ITR04618
Collector Current, IC -- mA
3
2
ITR04617
3
2
Cob -- VCB
Collector Current, IC -- mA
Cob -- VCB
2SA1773
f=1MHz
2SC4616
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
7 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
V
ITR04619
100
7
5
3
2
100
7
5
3
2
10
7
5
10
7
5
3
7 1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB --
Collector-to-Base Voltage, VCB -- V
7 100
2
ITR04620
No.3399-4/5
2SA1773 / 2SC4616
7
5
3
2
ASO
ICP= --4A
IC= --2A
2SA1773
s
1m
ms
7
5
3
2
ASO
ICP=4A
IC=2A
s
1m
s
m
10
2SC4616
10
Collector Current, IC -- mA
--1000
7
5
3
2
--100
7
5
3
2
--10
7
5
3
2
Collector Current, IC -- mA
DC
op
era
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
DC
DC
op
DC
n(
tio
era
op
tio
n
era
t
t
era
op
ion
(T
a=
ion
25
(T
a=
2
)
°
C
25
c=
(T
°
C
)
5
°
C)
C
5
°
=2
Tc
)
--1.0
--0.1
Tc=25°C
Single pulse
2 3
5 7--1.0
2 3
5 7 --10
2 3
5 7
--100
2 3
5
1.0
0.1
Tc=25°C
Single pulse
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
5 7
Collector-to-Emitter Voltage, VCE -- V
ITR04621
1.2
Collector-to-Emitter Voltage, VCE -- V
18
16
15
14
12
10
8
6
4
2
IT14853
PC -- Ta
2SA1773 / 2SC4616
PC -- Tc
2SA1773 / 2SC4616
Collector Dissipation, PC -- W
0.8
No
0.6
he
at
sin
k
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Collector Dissipation, PC -- W
1.0
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR04623
Case Temperature, Tc --
°C
ITR04624
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2009. Specifications and information herein are subject
to change without notice.
PS No.3399-5/5